Evaluation of Moderately Focused Laser Irradiation as a Method for Simulating Single-Event Effects

Detector Part of the Station for the Research and Irradiation of Promising Products of Semiconductor Micro- and Nanoelectronics with High-Energy Ion Beams

“…TO SINGLE EVENT EFFECTS Nowadays, two cumulative methods are used to study the IC durability to SEEs: the low-energy heavy nucleus beam method and pulsed laser method [3][4][5][6][7]. Both approaches have certain advantages and disadvantages [8,9].…”

“…The use of a laser simulator with a focused spot a few micrometers in diameter [7,9] and a comparable accuracy of its aiming allows us to circumvent this difficulty, but there are some other problems. The most significant of them is related to the presence of multi-…”

The Laser-only Single-event Effects Test Method for Spacecraft Electronics Based on Ultrashort-pulsed-laser Local Irradiation

“…While executing SEE tests of semiconductor electronic devices with pico-and femtosecond laser facilities for both front-side and backside geometries we use two main laser irradiation techniques: focused [1][2][3] and local, [4][5][6][7][8][9]. There is also third approach based on two-photon absorption (TPA) [10], however, due to the complexity of LET estimation, TPA technique is being primarily used for scientific research but not for qualification tests.…”

“…The alternative way to investigate SEEs is to utilize ultra-short pulses of light from pico-or femtosecond laser beam, focused onto the active IC layer [1][2][3][4][5][6][7][8][9], to initialize effects similar to that, induced by heavy particle transition. In principle we can choose appropriate laser wavelength for any semiconductor material, for example, Si or GaN.…”

Single-event-effect sensetivity characterization of LSI circuits with a laser-based and a pulsed gamma-ray testing facilities used in combination

“…The approach is, however, time con suming and costly and does not allow one to test selected parts of an LSI chip due to the stochastic nature of radiation-matter interaction. Alternative method is to use focused laser radiation [4][5][6]. Unfor tunately, estimates of equivalent LET so obtained may suffer from a relative error as large as 40% because the electrical properties of semiconductor structures (such as the type of electrical conductivity in the substrate) may not be known exactly.…”