Evaluation of new x-ray stepper, the XRA

Sumitani, Hiroaki; Suita, Muneyoshi; Mitsui, Soichiro; Aoyama, Hajime; Fujii, Kiyoshi; Watanabe, Hiroshi; Taguchi, Takao; Matsui, Yasuji

doi:10.1116/1.1410091

Cited by 9 publications

(4 citation statements)

References 12 publications

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“…4,5) As for the printing accuracy, the CD controllability of better than 10 nm (3) and the alignment accuracy within 20 nm (3) are achieved at the gap of 10 m, and the overlay accuracies of less than 30 nm (3) are achieved between gate and contact layers, which satisfy the specifications required at the 100 nm node. 6) It was also found that the PXL has a high fidelity for line and space (L&S), hole and twodimensional patterns of 70 nm at the gap of 10 m. 7) Thus, the specifications required at the 100 nm node have already been achieved in PXL, except for mask defects. Now, we are interested in realizing the resolution extendibility toward 50 nm and below.…”

Section: Introductionmentioning

confidence: 97%

50 nm Pattern Printing by Narrowband Proximity X-Ray Lithography

Watanabe

Marumoto

Sumitani

et al. 2002

Jpn. J. Appl. Phys.

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This paper describes one aspect of advanced proximity X-ray lithography, called second generation proximity X-ray lithography (PXL-II). The spectra absorbed in the resists containing special elements (e.g., Cl, S, P, Si and Br), which have an absorption edge within the exposure spectrum, become narrowband as compared with those in the conventional resist. In this paper, we investigated narrowband spectrum effects on resolution enhancement by using an optical image simulator and by carrying out some exposure experiments. As a result, it was found that the combination of a narrowband spectrum and the simple mask pattern bias is effective to enhance the resolution. In actual exposure experiments, the 50 nm line-and-space (L&S) patterns were formed at the wide gap of 10 m by using a narrowband spectrum and mask pattern with biases of more than 20 nm. Moreover, by using the narrowband spectrum absorbed in the resist with Br content of 40 wt%, we indicated that the power absorbed in the resist is several times greater than that absorbed in the conventional resist.

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Section: Introductionmentioning

confidence: 97%

50 nm Pattern Printing by Narrowband Proximity X-Ray Lithography

Watanabe

Marumoto

Sumitani

et al. 2002

Jpn. J. Appl. Phys.

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“…A smaller gap improves the resolution, and exposure at a gap of 10 m has been achieved. 1 The resolution derived by the Fresnel-Kirchhoff diffraction is also improved by using a shorter wavelength x ray, but it has been generally considered that the secondary electron blur increases in a shorter x-ray wavelength region, and the resolution degrades. We have reported that the secondary electron blur can be suppressed in a specified wavelength region shorter than the absorption edge of additive atoms such as Cl, Br, or Si in a resist.…”

Section: Introductionmentioning

confidence: 99%

Improvement of resolution in x-ray lithography by reducing secondary electron blur

Kise

Watanabe

Itoga

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In x-ray lithography, the energy deposition mechanism of secondary electrons generated in the resist and Si substrate is investigated. By reducing resist thickness, the secondary electron blur is reduced because secondary electrons with high energy exit the resist before depositing energy in the lateral direction. Resolution is improved using a thin Cl-containing resist, especially in wavelengths shorter than the K-shell absorption edge of Cl atoms. The secondary electron blur in the wavelength region from 2.5 to 4.0 Å decreases using a 40-nm-thick Cl-containing resist with a bottom layer. By using an x ray in this wavelength region, the 35 nm line-and-space pattern can be resolved at a gap of 10 μm. A higher quality resist pattern can be obtained by increasing the Cl contents in the resist.

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“…Membrane-based photomasks are used in proximity X-ray lithography [1][2][3][4] including that in LIGA (Lithographie, Galvanoformung und Abformung) process, [5][6][7][8][9] and near-field photolithography, 10,11) where accurate mask configuration and pattern placement are required from mass-production standpoints. Figure 1 shows a schematic view of the proximity X-ray lithography as an example of the lithography using the membrane-based photomask, where the X-ray mask consist of absorber fine pattern, membrane window, Si wafer and support plate, and X-ray mask and processing Si wafer with resist are set with proximity maskwafer gap around 5-20 m in the exposure process.…”

Section: Introductionmentioning

confidence: 99%

Theoretical Analysis on Mechanical Deformation of Membrane-Based Photomask Blanks

Marumoto

Aya

Yabe

et al. 2012

Jpn. J. Appl. Phys.

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We use the recently derived form factor expansions of the diagonal two-point correlation function of the square Ising model to study the susceptibility for a magnetic field applied only to one diagonal of the square lattice, for the isotropic Ising model. We exactly evaluate the one and two particle contributions χ (1) d and χ (2) d of the corresponding susceptibility, and obtain linear differential equations for the three and four particle contributions, as well as the five particle contribution χ (5) d , but only modulo a given prime. We use these exact linear differential equations to show that not only the Russian-doll structure but also the direct sum structure on the linear differential operators for the n-particle contributions χ (n) d are quite directly inherited from the direct sum structure on the form factors f (n) . We show that the nth particle contributions χ (n) d have their singularities at roots of unity. These singularities become dense on the unit circle | sinh 2E v /kT sinh 2E h /kT | = 1 as n → ∞.

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Evaluation of new x-ray stepper, the XRA

Cited by 9 publications

References 12 publications

50 nm Pattern Printing by Narrowband Proximity X-Ray Lithography

50 nm Pattern Printing by Narrowband Proximity X-Ray Lithography

Improvement of resolution in x-ray lithography by reducing secondary electron blur

Theoretical Analysis on Mechanical Deformation of Membrane-Based Photomask Blanks

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