Evaluation of OPC quality using automated edge placement error measurement with CD-SEM

Tabery, Cyrus; Morokuma, Hidetoshi; Sugiyama, Akiyuki; Page, Lorena

doi:10.1117/12.663017

Cited by 28 publications

(14 citation statements)

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“…The main difficulty lies in transferring sufficient information about two-dimensional proximity features such as tip-to-tip or line ends into the OPC model building process. In addition, line edge roughness (LER) tends to introduce noise that is large compared to the model building accuracy requirements of advanced technology nodes 9,10 . Typical OPC patterns used of OPC model building are shown in Figure 6.…”

Section: The Measurement Of 3d and Opc Structuresmentioning

confidence: 99%

Extending scatterometry to the measurements of sub 40 nm features, double patterning structures, and 3D OPC patterns

Kritsun¹,

Fontaine²,

Liu³

et al. 2008

Optical Microlithography XXI

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This paper examines the extendibility of the scatterometry techniques to characterize structures pushing the limits of current lithographic printing technologies. In particular, we investigate the limits of normal-incidence optical CD (NI-OCD) measurements using the smallest features afforded by the most recent generation of hyper-NA immersion scanners. Special analysis techniques have also been developed and applied to cases relevant to double exposure and double patterning lithography. Models were used successfully to decouple CD and overlay values associated with patterning the first and second set of features on the wafer, using a single scatterometry measurement. These advances pave the way to the development of full solutions for the general case of double patterning structures with two different populations of lines or structures.In addition, the current study focused on seeking a better understanding of the use of scatterometry 3D features characterization, particularly as it relates to OPC model building and verification. The demonstration of tip-to-tip measurements on 3D structures is very encouraging as it introduces the advantages of scatterometry, such as reduced influence of line-edge roughness (LER) and better precision, to the practice of advanced OPC model building.

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Section: The Measurement Of 3d and Opc Structuresmentioning

confidence: 99%

Extending scatterometry to the measurements of sub 40 nm features, double patterning structures, and 3D OPC patterns

Kritsun¹,

Fontaine²,

Liu³

et al. 2008

Optical Microlithography XXI

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“…A design based SEM contouring flow and the use of those contours and the design edge to SEM edge distances -edge placement errors (EPE) was presented last year 3,4 . In this paper, a flow is presented detailing the use of those same contours for model calibration.…”

Section: Contour Based Calibrationmentioning

confidence: 99%

SEM image contouring for OPC model calibration and verification

et al. 2007

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Lithography models for leading-edge OPC and design verification must be calibrated with empirical data, and this data is traditionally collected as a one-dimensional quantification of the features acquired by a CD-SEM. Two-dimensional proximity features such as line-end, bar-to-bar, or bar-to-line are only partially characterized because of the difficulty in transferring the complete information of a SEM image into the OPC model building process. A new method of twodimensional measurement uses the contouring of large numbers of SEM images acquired within the context of a design based metrology system to drive improvement in the quality of the final calibrated model.Hitachi High-Technologies has continued to develop "full automated EPE measurement and contouring function" based on design layout and detected edges of SEM image. This function can measure edge placement error everywhere in a SEM image and pass the result as a design layout (GDSII) into Mentor Graphics model calibration flow. Classification of the critical design elements using tagging scripts is used to weight the critical contours in the evaluation of model fitness.During process of placement of the detected SEM edges of into the coordinate system of the design, coordinate errors inevitably are introduced because of pattern matching errors. Also, line edge roughness in 2D features introduces noise that is large compared to the model building accuracy requirements of advanced technology nodes. This required the development of contour averaging algorithms. Contours from multiple SEM images are acquired of a feature and averaged before passing into the model calibration. This function has been incorporated into the prototype Calibre Workbench model calibration flow.Based on these methods, experimental data is presented detailing the model accuracy of a 45nm immersion lithography process using traditional 1D calibration only, and a hybrid model calibration using SEM image contours and 1D measurement results. Error sources in the contouring are assessed and reported on including systematic and random variation in the contouring results.

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“…Whether in-line or post-processing, new advanced measurements algorithms are being developed at an accelerated pace, because of the catalytic effect of the DDM framework. In addition to pure image processing algorithms like extraction of Line Edge Roughness (LER) (Figure (6.b), the availability of layout shapes allows for novel algorithms to be implemented, among which, most notably, direct determination of measured Edge Placement Errors (EPE) 9 , i.e. differences between patterned edges and design-target edges (Figure 7).…”

Section: Design-driven Cd-sem Metrology Interfacementioning

confidence: 99%

Design-driven metrology: a new paradigm for DFM-enabled process characterization and control: extensibility and limitations

Capodieci

2006

SPIE Proceedings

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After more than 2 years of development, Design-Driven Metrology (DDM) is now being introduced into production flows for semiconductor manufacturing, with initial applications targeted at 65 nm and below, but also backwardcompatible to 90 nm and above nodes. This paper presents the fundamental components of the DDM framework, and the characteristic architectural relationships among these elements. The discussion includes current status and future prospects for this new metrology paradigm, which represents the true enabler for Design For Manufacturability (DFM) flows and applications. At the core of Design-Driven Metrology lies the simple but powerful concept of utilizing physical design layouts, and more specifically (X,Y) coordinates and polygonal shapes, to automate the generation of metrology jobs. Derived from 10 year old practices of Optical Proximity Correction, the adoption of CAD tools for visualization and manipulation of design layouts, in everyday lithography work, has provided the essential infrastructure for metrology automation. The in-depth discussion of data-flow and system architecture is followed by a presentation of key DDM applications, with specific emphasis on CDSEM metrology, ranging from process development and yield optimization to circuit design. The study concludes with an analysis of the extendibility of DDM and derived flows to other metrology areas in semiconductor manufacturing.

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Evaluation of OPC quality using automated edge placement error measurement with CD-SEM

Cited by 28 publications

References 0 publications

Extending scatterometry to the measurements of sub 40 nm features, double patterning structures, and 3D OPC patterns

Extending scatterometry to the measurements of sub 40 nm features, double patterning structures, and 3D OPC patterns

SEM image contouring for OPC model calibration and verification

Design-driven metrology: a new paradigm for DFM-enabled process characterization and control: extensibility and limitations

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