2005
DOI: 10.1016/j.apsusc.2004.05.278
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Evaluation of phase, composition, microstructure and properties in TiC/a-C:H thin films deposited by magnetron sputtering

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Cited by 143 publications
(77 citation statements)
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“…Between these contributions C-Si bonds, at 282.5 eV, are expected. For nanocomposite Ti-C materials additional contributions have also been reported in this region [37,38,39,40,41,42,43,44], which have been associated with several different causes, including ion beam sputtering damage [42], and an interfacial state between nc-TiC and a-C phase [12,40,41,43]. Such contribution can hence not be excluded in the present samples, and is indicated in Figure 4 by TiC*.…”
Section: The Influence Of the Target-to-substrate Distance And Pressurementioning
confidence: 82%
“…Between these contributions C-Si bonds, at 282.5 eV, are expected. For nanocomposite Ti-C materials additional contributions have also been reported in this region [37,38,39,40,41,42,43,44], which have been associated with several different causes, including ion beam sputtering damage [42], and an interfacial state between nc-TiC and a-C phase [12,40,41,43]. Such contribution can hence not be excluded in the present samples, and is indicated in Figure 4 by TiC*.…”
Section: The Influence Of the Target-to-substrate Distance And Pressurementioning
confidence: 82%
“…By tuning the TiC grain size and fraction of a-C matrix, the properties can be controlled as the matrix phase increases the toughness of the material and softens the nanocomposite compared to pure carbides but also provides a source of solid lubricant. [2][3][4][5][6][7][8] The nc-TiC has a NaCl crystal structure and its bonding is a mixture of covalent, ionic and metallic bonds where the covalent contribution consists of Ti e g -C 2p ͑pd ͒, Ti t 2g -C 2p ͑pd ͒, and Ti-Ti t 2g ͑dd ͒ bonds, 9 which are all found in the valence band.…”
Section: Introductionmentioning
confidence: 99%
“…In the nanocomposite C 1s spectrum, an additional shoulder is observed at about ϳ283 eV binding energy between the C-C and Ti-C peaks, which we denote C-Ti ‫ء‬ . 3,7,[11][12][13][14][15][16] The intensity of this additional feature increases upon sputter etching. 17 However, recent studies with high-energy XPS have shown that it is present also in unsputtered samples.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore increasing of the acetylene supply flow results in continuous phase change from Ti-rich Ti/TiC (zone I) to mainly single phase TiC (zone II) and finally to carbon-rich TiC/C(zone III). The evolution of the target state is similar to phase changes in the growing TiC/C films with increase carbon content as can be found for example in [10,35].…”
Section: The State Of the Targetmentioning
confidence: 48%
“…Hybrid PVD-PECVD process is being used for synthesis of metal hydrogenated carbon nanocomposite (MeC/C(:H)) [6,[8][9][10][11][12][13] layers or DLC layers doped with metal (DLC:Me) [14][15][16][17]. For example nc-WC/a-C:H [18][19][20][21] or nc-TiC/a-C:H [9,[22][23][24] are reported to have good mechanical and tribological properties combining high hardness, good toughness with low friction coefficient and wear which makes these materials industrially attractive for different applications.…”
Section: Introductionmentioning
confidence: 99%