Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates

Parsons, Jonathan; Beer, C.S.; Leadley, D. R.; Capewell, Adam Daniel; Grasby, T. J.

doi:10.1016/j.tsf.2008.08.026

Cited by 5 publications

(4 citation statements)

References 11 publications

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“…White-beam X-ray topography (WB-XRT) is widely used for the characterization of both long-range and short-range strain in single crystals [66][67][68][69]. High-resolution X-ray topography (XRT) provided quantitative measurements of misfit dislocation line density [70], together with the monitoring of in situ and real-time nucleation, growth, and movement of dislocations in silicon at high temperatures [71]. In situ XRT using synchrotron radiation during mechanical testing [72] or crystal growth [73] helped to reveal the mechanism of dislocation formation.…”

Section: Microscopic Analysesmentioning

confidence: 99%

An insight into dislocation density reduction in multicrystalline silicon

Woo

Bertoni

Choi

et al. 2016

Solar Energy Materials and Solar Cells

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Section: Microscopic Analysesmentioning

confidence: 99%

An insight into dislocation density reduction in multicrystalline silicon

Woo

Bertoni

Choi

et al. 2016

Solar Energy Materials and Solar Cells

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“…While the J block term may be effective in considering the strong blocking caused by stacking faults, which are characteristic of the relaxation of tensile (but not compressive) SiGe, 52,53 we also consider that the strain field of existing dislocations reduces the effective film thickness h* which mobile dislocations can glide through, 54,55 so we use…”

Section: Relaxation Modelmentioning

confidence: 99%

Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

Frigerio

Lodari

Chrastina

et al. 2014

Journal of Applied Physics

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We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and straindependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained. V C 2014 AIP Publishing LLC.

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“…The emission amplitude of DLTS from the bulk (Depletion depth is estimated between 660nm to 1.1um) is reduced significantly in samples with 45nm strained silicon layer by the nitridation treatment and this indicates nitridation reduces Ge related defects occurring due to Ge out-diffusion from the buffer layer to the s-Si surface (4) and passivate misfit dislocations. However, samples with 23nm strained silicon layer show stronger bulk emission after nitridation treatment and this could be due to the fact that annealing enhances relaxation in thin s-Si layer sample (5). Annealing can induce threading dislocation glide impacting the electrical activity.…”

Section: Dlts Spectrum Of Dislocation Related Defectsmentioning

confidence: 99%

DLTS of ALD HfO₂ on s-Si/SiGe/Si: Effects of s-Si Thickness and Surface Nitridation

Rozgonyi

Shrestha

et al. 2009

ECS Trans.

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MOS capacitors have been used as depth-dependent probing tools for MOS-DLTS studies of ALD HfO 2 on s-Si/SiGe/Si composite samples. Surface nitridation prior to HfO 2 deposition was carried out to improve the HfO 2 /s-Si interface by suppressing hafnium silicate interlayer formation. The overall effects of nitridation on the HfO 2 /s-Si interface and the s-Si/SiGe bulk region with different strained Si layer thicknesses were studied. The relationship between DLTS peak amplitude and pulsing time indicates the emission source in bulk region is related with Ge decorated dislocations and in the interface region it originates from the HfO 2 /s-Si interface. In the s-Si/SiGe bulk region, nitridation reduces the trap concentration and shifts trap energy level toward mid-gap. For the interface, nitridation shifts trap energy level toward valence band and reduces hole capture cross section significantly.

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Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates

Cited by 5 publications

References 11 publications

An insight into dislocation density reduction in multicrystalline silicon

An insight into dislocation density reduction in multicrystalline silicon

Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

DLTS of ALD HfO₂ on s-Si/SiGe/Si: Effects of s-Si Thickness and Surface Nitridation

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Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates

Cited by 5 publications

References 11 publications

An insight into dislocation density reduction in multicrystalline silicon

An insight into dislocation density reduction in multicrystalline silicon

Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

DLTS of ALD HfO2 on s-Si/SiGe/Si: Effects of s-Si Thickness and Surface Nitridation

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DLTS of ALD HfO₂ on s-Si/SiGe/Si: Effects of s-Si Thickness and Surface Nitridation