Evaluation of SiC Stack Cascode for 200°C Operations

Abstract

This paper evaluates the static and dynamic characteristics of a 1.2kV SiC stack-cascode at junction temperatures (Tj) up to 200°C. The experimental results show that, at Tj = 200°C, the SiC stack-cascode can be switched stably under a 600V-17A inductive load condition and can withstand an avalanche current of 13A for 9μs (Eav = 116mJ) for a 1.5mH load inductor. The SiC stack-cascode has no degradation in on-resistance, threshold voltage and blocking characteristics after 80 hours HTRB reliability test at 200°C ambient. These promising experimental results indicate the possibility of the SiC stack-cascode for reliable 200°C operations.

Series-connection of SiC normally-on JFETs

“…Tremendous efforts have been invested to develop SiC JFETs and 1200V SiC normally-on JFETs are now commercially available [2,3]. Normally-off operation mode of SiC normally-on JFET can be easily implemented by forming a cascode device with a low voltage normally-off silicon MOSFET [4,5].…”