The outlook for SiC vertical JFET technology

Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

“…Developing reliable gate oxides in SiC has required a significant academic Performance and Reliability Review of 650V and 900V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs J. Ortiz Gonzalez, Member, R. Wu, S. Jahdi, Member and O. Alatise, Member S and industrial research effort [10][11][12] and yet it still lags silicon gate oxides while remaining completely illusive in GaN. As a result, non-MOSFET alternatives like JFETs [13,14] and BJTs [15,16] have been more widely explored using SiC and HEMTs have been developed in the case of GaN [6]. Due to the lack of availability of bulk GaN substrates, GaN devices are typically lateral devices fabricated on foreign substrates (SiC, ceramic and more recently silicon substrates) although vertical GaN devices have been investigated as research prototypes however with no commercial devices demonstrated [17].…”

AC‐coupled gate driver with gate current switch under single power supply for normally‐off SiC JFET

“…The advantage of SiC JFETs over SiC MOSFETs is that no gate insulator films are required [7][8][9][10]. Thus, SiC JFETs are potentially useful in environments with high junction temperatures [11,12] by using advanced high-temperature packaging technology.…”

Comparative evaluation of the short-circuit withstand capability of 1.2kV silicon carbide (SiC) power transistors in real life applications

“…SiC junction field effect transistors (JFET), which are ideal for high temperature applications, exhibit high reliability during stressful abnormal conditions, since they are free from gate oxide limitations [11][12][13].…”