Evaluation of Sn-based microbumping technology for hybrid IR detectors, 10µm pitch to 5µm pitch

Soussan, Philippe; Majeed, Bivragh; Boterf, P. Le; Bouillon, Pierre

doi:10.1109/ectc.2015.7159652

Cited by 3 publications

(1 citation statement)

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“…Ga + focused ion beam (FIB) tools have been applied with some success to the preparation of cross-sections of low melting point metals (Tu & Zeng, 2002;Deppisch et al, 2006;Cheng et al, 2009;Tian et al, 2009aTian et al, , 2014Dang et al, 2012;Matsushima et al, 2013;Chou & Williams, 2014;de Morais et al, 2014;Soussan et al, 2015;Wang & Kao, 2019). There have not been any reports of the use of Xe + plasma focused ion beam (PFIB) applications to low melting point metal sample preparation.…”

Section: Introductionmentioning

confidence: 99%

Focused Ion Beam Preparation of Low Melting Point Metals: Lessons Learned From Indium

et al. 2022

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Indium (In) and other low melting point metals are used as interconnects in a variety of hybridized circuits and a full understanding of the metallurgy of these interconnects is important to the reliability and performance of the devices. This paper shows that room temperature focused ion beam (FIB) preparation of cross-sections, using Ga+ or Xe+ can result in artifacts that obscure the true In microbump structure. The use of modified milling strategies to minimize the increased local sample temperature are shown to produce cross-sections that are representative of the In bump microstructure in some sample configurations. Furthermore, cooling of the sample to cryogenic temperatures is shown to reliably eliminate artifacts in FIB prepared cross-sections of In bumps allowing the true bump microstructure to be observed.

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