Evaluation of spin waves and ferromagnetic resonance contribution to the spin pumping in a Ta/CoFeB structure

Jamali, Mahdi; Smith, Angeline Klemm; Li, Hongshi; Wang, Jian Ping

doi:10.1088/0022-3727/49/12/12lt01

Cited by 5 publications

(2 citation statements)

References 35 publications

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“…It should be noted that in all samples Ta has been used as both seed and capping layers. Considering the high spin-orbit coupling in Ta, spin pumping effect may be another reason for the enhancement of α in these samples [31]. We observed that the value of α is increased in the Co/CFB bilayers (samples S3 and S4) as compared to the single layered Co and CFB thin films (i.e.…”

Section: Resultsmentioning

confidence: 74%

Effect of sputtered flux direction on damping properties in magnetic bilayers

Nayak¹,

Mallick²,

Singh³

et al. 2018

J. Phys. D: Appl. Phys.

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We deposited Co40Fe40B20 (hard)/Co (soft) bilayers by varying the direction of the substrate relative to the line of impinging flux of sputtered atoms of the constituent layers. We have chosen two orientations in which the angle between the sputter flux for Co40Fe40B20 and Co layers are 0° (parallel-configuration) and 90° (perpendicular-configuration) with respect to each other. Domain imaging and the dynamic magnetic properties have been studied by performing magneto-optic Kerr effect based microscopy and ferromagnetic resonance spectroscopy, respectively. Kerr microscopy revealed that magnetic domains for the bilayers grown in different configurations exhibit a cumulative effect of the domain structure of both the single layers. However, we found that the damping constant α for the bilayers grown in the parallel-configuration exhibit lower damping as compared to the corresponding sample grown under the perpendicular-configuration.

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Section: Resultsmentioning

confidence: 74%

Effect of sputtered flux direction on damping properties in magnetic bilayers

Nayak¹,

Mallick²,

Singh³

et al. 2018

J. Phys. D: Appl. Phys.

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“…spin current and charge was investigated by spin-torque ferromagnetic resonance (ST-FMR) [25][26][27][28][29][30][31][32][33].…”

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confidence: 99%

Spin–orbit torques in GaN/NiFe bilayers

Luo

Wang

et al. 2018

J. Phys. D: Appl. Phys.

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Extensive applications of magnetic storage logic devices request the use of as little current density and energy as possible to drive magnetic moment reversal [1,2]. In such a field of spin electronics, one of the key points is generation, manipulation and detection of spin current efficiently [3,4]. The combination of magnetic material and non-magnetic material with spin-orbit coupling (SOC) is considered to achieve the core hopefully [5-7], because the SOC allows spin current and charge current to be converted reciprocally [4]. In general, an electric current induces a transverse spin current. This results in spin accumulation at the boundaries, or a uniform spin polarization, or both effects simultaneously. At the same time, the inverse effects exist too. Specifically, the spin Hall effect (SHE) [8][9][10][11] or current-induced spin orientation (CISP) [12][13][14][15][16][17][18][19], which stem from SOC, can transform a longitudinal charge flow into a transverse spin current, while their opposite effect, namely the inverse spin hall effect (ISHE) [8,20] or spin-galvanic effect (SGE) [14,[21][22][23][24], can convert spin current into normal charge current. The conversion of

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