Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors

Rafı́, J.M.; Cardona-Safont, L.; Zabala, M.; Boulord, C.; Campabadal, F.; Pellegrini, G.; Lozano, M.; Simoen, Eddy; Claeys, Cor

doi:10.4028/www.scientific.net/ssp.131-133.431

Cited by 2 publications

(2 citation statements)

References 25 publications

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“…6a, low s r values (in the range of 10 or 20 ls) are measured on the non-passivated, as-received materials, having high recombination velocities on the front and back bare surfaces. 34 The s r values significantly increase after the passivation with 11 nm Al 2 O 3 on both sides. However, as observed in Fig.…”

Section: Resultsmentioning

confidence: 91%

Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon

Rafı́

Zabala

Beldarrain

et al. 2011

J. Electrochem. Soc.

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Atomic layer deposition (ALD) of Al2O3 is of interest for a wide range of micronanoelectronic applications, where the electrical properties of the deposited layers can be strongly affected by deposition conditions and post-deposition treatments. In this work, a mercury-probe capacitance-voltage characterization is carried out on Al2O3 films deposited on silicon by ALD at different temperatures and subjected to various thermal treatments in N2 ambient. Effective positive charges located at the semiconductor/dielectric interface are encountered for the films deposited at the lowest temperature (100ºC). Positive Vfb shifts are always registered after the different thermal annealing conditions studied; however, the impact of the thermal treatments is found to be different depending on the deposition temperature. A significant negative charges build-up is observed after a 30 minutes anneal at 450ºC, where improved surface passivation properties are achieved. Interestingly, the hysteresis, as well as the Vfb shifts, clearly diminish for higher deposition temperatures or after a thermal anneal. However, the highest temperature treatments (800ºC) result in significant interface states generation. Finally, exploratory experiments about the stability of the Al2O3 layers under UV-light irradiation (in the 200 nm-300 nm wavelengths range) show that this can be responsible for a significant degradation of their electrical characteristics.

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Section: Resultsmentioning

confidence: 91%

Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon

Rafı́

Zabala

Beldarrain

et al. 2011

J. Electrochem. Soc.

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“…[2]). Finally, as performed in previous studies on irradiated silicon diodes (1,27), from the relation between W g and W r a dominant trap energy level can be extracted by using the following relationship (28):…”

Section: Resultsmentioning

confidence: 99%

Diode Characteristics and Thermal Donor Formation in Germanium-Doped Silicon Substrates

Rafı́

Vanhellemont

Simoen³

et al. 2013

ECS Trans.

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Germanium-doped silicon is studied actively for application in microelectronics, in particular, as an improvement of the radiation hardness of the silicon substrate can be achieved. However, the impact of the introduced germanium on the electrical stability and properties of the silicon material and devices is also of special concern. In this contribution we report the results of a study on the effects of low temperature thermal anneals relevant for backend processing, on the electrical characteristics of p-on-n diodes fabricated on Czochralski-grown (CZ) Ge-doped-Si with two different germanium concentrations (1•1019 cm-3 and 1.2•1020 cm-3), as well as on control CZ Si wafers without Ge doping. The results show good diode yield and uniformity, with little differences between the electrical characteristics of the fabricated diodes on the different substrates. However, interestingly for device applications, a significantly lower thermal donor generation (by one order of magnitude) is found for the case of the higher Ge-doped material subjected to 450ºC thermal anneals.

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Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors

Cited by 2 publications

References 25 publications

Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon

Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon

Diode Characteristics and Thermal Donor Formation in Germanium-Doped Silicon Substrates

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