Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions

Frigeri, C.; Attolini, G.; Bosi, Matteo; Pelosi, C.; Germini, F.

doi:10.1016/j.spmi.2008.10.019

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Cited by 4 publications

(1 citation statement)

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“…However, fabrication of abrupt hetero-interfaces in InGaP/ GaAs systems by metal organic vapor phase epitaxy (MOVPE) is more difficult than that in AlGaAs/GaAs, mainly due to the exchange between As and P [13][14][15][16]. Other factors that contribute to the difficulty are the ordering effect of InGaP and the segregation of In in the InGaP layer.…”

Section: Introductionmentioning

confidence: 99%

Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

Nakano

Shioda

Enomoto

et al. 2012

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

Nakano

Shioda

Enomoto

et al. 2012

Journal of Crystal Growth

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Study on growth and characterizations of GaxIn1−xP/GaAs solar cell structure

Kınacı

Özen

Asar

et al. 2013

J Mater Sci: Mater Electron

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Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

Serényi

Frigeri²,

Schiller

2018

Journal of Alloys and Compounds

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Surface quality is a key issue in semiconductor structures for device applications. Typical surface defects are blisters. Here we investigate on the relationship between the activation energy of blistering and the composition x in hydrogenated amorphous a-Si x Ge 1-x by employing layers deposited by Radio Frequency sputtering. To this aim the blistering activation energy was determined by means of Arrhenius plots in several samples with different compositions, including x=0 and x=1. Each sample was submitted to heat treatment up to the temperature where the onset of blistering was observed by change of the surface reflectivity. It is found that a linear dependence of the activation energy on x similar to the Vegard's law holds. The experimental result is supported by reaction kinetics modeling. It is suggested that the key step for the formation of blisters is the scission of the SiH and GeH bonds. The related energetic reaction leading to the formation of H 2 molecules in a-Si x Ge 1-x follows a linear law as a function of the x composition similarly to the activation energy.

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Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions

Cited by 4 publications

References 35 publications

Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

Study on growth and characterizations of GaxIn1−xP/GaAs solar cell structure

Vegard's-law-like dependence of the activation energy of blistering on the x composition in hydrogenated a-SixGe1-x

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