2015
DOI: 10.1039/c5cp00785b
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Evaluation of the intrinsic charge carrier transporting properties of linear- and bent-shaped π-extended benzo-fused thieno[3,2-b]thiophenes

Abstract: The local-scale hole mobilities of two isomeric linear- and bent-shaped π-extended thienoacenes were investigated using flash-photolysis and field-induced time-resolved microwave conductivity (FP- and FI-TRMC) techniques.

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Cited by 17 publications
(15 citation statements)
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“…Pentacene 1 showed hole and electron mobilities of 6.3 and 0.3 cm 2 V −1 s −1 respectively. N,N′‐ bis(cyclohexyl)naphthalene‐1,4,5,8‐bis(dicarboximide) (DCy‐NDI) and N,N′‐dioctylperylene‐1,4,5,8‐ bis(dicarboximide) (DC8‐PDI) presented electron mobilities of 12 cm 2 V −1 s −1 and 15 cm 2 V −1 s −1 . The short length scale hole value measured for pentacene is slightly higher than the reported single‐crystal OFET value of around 2 cm 2 V −1 s −1 .…”
Section: Charge Transportmentioning
confidence: 75%
“…Pentacene 1 showed hole and electron mobilities of 6.3 and 0.3 cm 2 V −1 s −1 respectively. N,N′‐ bis(cyclohexyl)naphthalene‐1,4,5,8‐bis(dicarboximide) (DCy‐NDI) and N,N′‐dioctylperylene‐1,4,5,8‐ bis(dicarboximide) (DC8‐PDI) presented electron mobilities of 12 cm 2 V −1 s −1 and 15 cm 2 V −1 s −1 . The short length scale hole value measured for pentacene is slightly higher than the reported single‐crystal OFET value of around 2 cm 2 V −1 s −1 .…”
Section: Charge Transportmentioning
confidence: 75%
“…[ 10,17 ] The observation of a drastic difference of mobility at short length-and time-scales on several OSCs and the infl uence of the charge carrier density for molecular semiconductors exhibiting mobilities higher than 100 cm 2 V −1 s −1 tend to support the difference of charge transport mechanism taking place in these materials. It is worth noting here that a decrease of mobility has already been observed consistently at room temperature on monolayer graphene and MoS 2 devices upon increase of the charge carrier density, as a result of scattering effects.…”
mentioning
confidence: 99%
“…Holding great promises for the rapid screening of a large number of semiconductor/dielectric pairs, this technique has also recently proved its effi ciency for quantitative probing of interfacial trap sites. [ 10,[15][16][17] It must be emphasized that FI-TRMC is complementary to OFET and Hall-effect methods because it probes charge transport over shorter lengthand time-scales, allowing thus to investigate the elementary steps of charge transport. FI-TRMC will certainly contribute to elucidate the charge transport mechanism exhibited by weakly van der Waals bonded systems.…”
mentioning
confidence: 99%
“…PS and PMMA are often of choices as a gate insulating materials in OFET devices, and considerable suppression of charge carrier mobility has been reported via the localization of charge carriers by dipolar effects at the insulator-semiconductor interfaces. [80][81][82] Clear localization of carriers in the long-range translational motion was observed and measured by FET fabrication of binary mixture of semiconducting polymers with dipoles 35,83 , thus the effects of the dipoles of PS and PMMA are of interest in the present mixture systems. Here, the mobility of charge carriers are estimated as a result of non-translational local motion induced by the alternating electric field of microwave probes, and the effects of the local dipoles of the surrounding media can be estimated in terms of the complex dielectric constants induced by an injection of charge carriers, hence by tracing transient dielectric dispersion.…”
Section: Binary Blends Of St-pdi+p3ht and Mma-pdi+p3htmentioning
confidence: 94%