Evaluation of the PV Cell Operation Temperature in the Process of Fast Switching to Open-Circuit Mode

Abstract

Abstract-A procedure for measuring the overheating temperature (AT) of a p-n junction area in the structure of photovoltaic (PV) cells converting laser or solar radiations relative to the ambient temperature has been proposed for the conditions of connecting to an electric load. The basis of the procedure is the measurement of the open-circuit voltage (Voc ) during the initial time period after the fast disconnection of the external resistive load. The simultaneous temperature control on an external heated part of a PV module gives the means for determining the value of Vb c at ambient temperature. Comparing it with that measured after switching OFF the load makes the calculation of AT possible. Calibration data on the Voc = f(T) dependences for single-junction AlGaAs/GaAs and triple-junction InGaP/GaAs/Ge PV cells are presented. The temperature dynamics in the PV cells has been determined under flash illumination and during fast commutation of the load. Temperature measurements were taken in two cases: converting continuous laser power by single-junction cells and converting solar power by triple-junction cells operating in the concentrator modules.

Counter-photo-electromotive force at heterointerfaces in MJ SC: Study by spectral method

“…At such light switching, the expected voltagetime dependence should have a shape of a rectangular triangle due to a gradual temperature rise [6][7][8] (if the transition electric processes in the p-n junction and in equipment are neglected). The triangle acute apex gives the required value of the not heated p-n junction voltage.…”

“…The V oc drop is strictly linear, which also proves the constancy of the incident power after t 0 (light switching moment). The linear dependence of V oc on temperature is well known [6][7][8], which makes easier to extrapolate V oc before the zero moment of time t 0 . The dependence of extrapolated V oc values on J g is presented in Fig.2b (black line).…”

Изопараметрические гетероструктуры AlInGaAsP/InP и их свойства

“…Многокомпонентные твердые растворы соединений A III B V могут служить основой гетероструктур для эффективных оптоэлектронных приборов [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Необходимым условием этого является получение совершенных по структуре эпитаксиальных слоев твердых растворов соединений A III B V и совмещение их по периоду решетки с бинарными соединениями, обладающими требуемыми электрофизическими характеристиками.…”

Study of Functional Coatings of Polyvinyl Butyral With Silver Nanoparticles for Photovoltaic Converters

“…Также не теряет актуальности проблема снижения потерь в ФЭП связанных: оптимизация последовательного и параллельного сопротивления, приводящая к снижению потерям мощности на омических контактах, уменьшение влияния эффекта термализации и отражения от поверхности ФЭП. [1][2][3].…”