Evaluation of Thermal Resistance Reduction by Thinning Substrate of β-Ga<sub>2</sub>O<sub>3</sub> SBD

Seki, Syûzô; Funaki, Tsuyoshi; Arima, Jun; Fujita, Motomichi; Hirabayashi, Jun; Hanabusa, Kazuyoshi

doi:10.23919/icep58572.2023.10129761

Cited by 1 publication

(1 citation statement)

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“…Minimizing the thermal boundary resistance and Ga 2 O 3 substrate thinning is key in facilitating efficient heat removal. A Ga 2 O 3 SBD on a thinned-down, 100 µm-thick bulk substrate showed a significant reduction in junction-to-case thermal resistance by 30% compared to the reference device on 250 µm-thick substrates [466], and further substrate thinning to less than 50 µm with the integration of a backside heat sink are predicted to offer further improvements of heat transfer [467].…”

Section: Thermal Management For Ga 2 O 3 Devicesmentioning

confidence: 94%

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Woo,

Bian,

Noshin

et al. 2024

J. Phys. Mater.

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Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga2O3. For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.

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Section: Thermal Management For Ga 2 O 3 Devicesmentioning

confidence: 94%