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Contact resistivity reduction at PtSi/Si(100) interface by dopant segregation (DS) process was investigated by the crossbridge Kelvin resistor (CBKR) method for the first time. After the 60 nm-thick PtSi was formed at 700 o C/1 min in N 2 ambient, ion implantation (PH 3 or BF 3 , 1×10 15 cm À2 , 15 keV) was carried out followed by the drive-in anneal at 800 o C/1 min as a DS process. The Schottky barrier height (SBH) for electron and hole obtained from the C-V characteristics of PtSi/Si(100) diodes were 0.19 eV and 0.23 eV, respectively. The contact resistivity of 1.7×10 À7 Ωcm 2 for PtSi/p +-Si(100) and 1.8×10 À6 Ωcm 2 for n +-Si(100) were achieved even for the minimum contact area of 2.2 μm 2 and 33 μm 2 , respectively.

This paper studies transient thermal characteristics of 𝛽 − Ga 2 O 3 Schottky barrier diode(SBD) packaged in TO-220. Planar and metal-oxide-semiconductor(MOS) trench anode types are evaluated. Junction temperature is estimated from temperature dependency of forward conduction characteristics in measuring SBD transient thermal characteristics. This paper confirms the completeness of processed Schottky junction on 𝛽-Ga 2 O 3 with extracted diode ideal factor and Schottky barrier height of SBDs. The measured transient thermal characteristics of developed 𝛽-Ga 2 O 3 SBDs are proved to have higher thermal resistance compared to commercially available SiC SBD and left much to be improved.