Transient thermal characterization of <i>β</i>-Ga₂O₃ Schottky barrier diodes

Abstract

This paper studies transient thermal characteristics of 𝛽 − Ga 2 O 3 Schottky barrier diode(SBD) packaged in TO-220. Planar and metal-oxide-semiconductor(MOS) trench anode types are evaluated. Junction temperature is estimated from temperature dependency of forward conduction characteristics in measuring SBD transient thermal characteristics. This paper confirms the completeness of processed Schottky junction on 𝛽-Ga 2 O 3 with extracted diode ideal factor and Schottky barrier height of SBDs. The measured transient thermal characteristics of developed 𝛽-Ga 2 O 3 SBDs are proved to have higher thermal resistance compared to commercially available SiC SBD and left much to be improved.