Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference
DOI: 10.1109/imnc.2003.1268621
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Evaporated electron beam lithography resist for non-planar surfaces

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Cited by 2 publications
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“…A line array with a smaller period was found collapsed because of the capillary force during the drying of the rinsing liquid. The obtained half-pitch of 50 nm is much smaller than the previously reported evaporated resists. To demonstrate its patterning capability on a nonflat surface, 50 nm PS film was evaporated onto an AFM cantilever and exposed with the same conditions. An array of letters “WIN” (Waterloo Institute for Nanotechnology) with a line width of 34 nm was successfully patterned on an AFM cantilever, as seen in Figure .…”
Section: Resultsmentioning
confidence: 99%
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“…A line array with a smaller period was found collapsed because of the capillary force during the drying of the rinsing liquid. The obtained half-pitch of 50 nm is much smaller than the previously reported evaporated resists. To demonstrate its patterning capability on a nonflat surface, 50 nm PS film was evaporated onto an AFM cantilever and exposed with the same conditions. An array of letters “WIN” (Waterloo Institute for Nanotechnology) with a line width of 34 nm was successfully patterned on an AFM cantilever, as seen in Figure .…”
Section: Resultsmentioning
confidence: 99%
“…Eric et al . have developed a negative evaporated sterol resist, named QSR-5, which was employed to pattern on an optical fiber and laser diode facet, as well as on the backside of membranes for the fabrication of an X-ray mask. Yet, in addition to its moderate resolution, this specially formulated resist is not commercially available. Daniel et al .…”
mentioning
confidence: 99%
“…However, this method cannot uniformly coat the bottom of a rod or the faces of other types of 3D substrates. Spraying or evaporating resist material seems to be appropriate for a curving surface or a surface with a step [5,6]. However, the resist particles move towards substrates from one direction, which limit the uniformity for 3D/deep structures.…”
Section: Introductionmentioning
confidence: 99%