Evidence for a deep electron trap and charge compensation in separation by implanted oxygen oxides

Conley, John F.; Lenahan, Patrick M.; Roitman, P.

doi:10.1109/23.211410

Cited by 31 publications

(10 citation statements)

References 25 publications

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“…Intrinsic defects and defects associated with dopants in silica are still of interest for technological issues such as Bragg gratings in silica [1], defects at the Si/SiO 2 interface, in the interior of SiO 2 insulating films in semiconductor devices which affect device failure mechanisms [2,3], and the change in optical properties in ultraviolet silica windows in laser systems due to the production of defects by photons which reduces the light transmission of the windows. Ion implantation has been used to form optical wave guides and to dope silica insulators in semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence and absorption in multi-energy Ge implanted type III silica

Magruder

Weeks

Weller

et al. 2004

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 99%

Photoluminescence and absorption in multi-energy Ge implanted type III silica

Magruder

Weeks

Weller

et al. 2004

Journal of Non-Crystalline Solids

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“…4 -8 For quite some time, no explicit distinction was made with regard to possible variations in EЈ line shapes or structures in thin SiO 2 films. Recently though, a menagerie of ''new'' EЈ variants [9][10][11][12][13][14][15][16][17][18][19] has been reported, almost entirely in exotic SiO 2 thin films. The new EЈ variant observations include a ''peculiar'' line shape in separation by implanted oxygen ͑SIMOX͒ buried oxides, 9,10 the 10.4 G doublet 11,12 and 74 G doublet 11,13,14 hydrogen complexed EЈ center spectra, the ''EX'' center 15 in home grown thermal SiO 2 , the ''EH'' center 16 in bond and etchback ͑BESOI͒ buried oxides, and E ␦ Ј-like centers.…”

mentioning

confidence: 99%

Observation and electronic characterization of two E′ center charge traps in conventionally processed thermal SiO2 on Si

Conley

Lenahan

Evans³

et al. 1994

Applied Physics Letters

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We demonstrate that at least two varieties of E′ defect precursors exist in a wide variety of conventionally processed thermal SiO2 thin films. We provisionally label the defects EP and E′γp. We find that EP defect capture cross sections exceed the corresponding E′γp values by an order of magnitude, that EP centers are distributed far more broadly throughout the oxides than are the E′γp defects, and that the EP resonance, unlike the E′γp resonance is not stable at room temperature.

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“…However, as is often the case in studies of oxide f'iims, there is no one-toone correlation between the E,' center density and charge density [6][7][8]201. (Note that the E, ' concentration is approximately the same as that of the E,' center; thus, the addition of this defect does not account for the trapped charge density).…”

Section: Discussionmentioning

confidence: 97%

Effect of supplemental O implantation on the radiation-induced hole traps in SIMOX buried oxides

Zvanut

Benefield

Hughes³

1994

IEEE Trans. Nucl. Sci.

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We describe electrical and spectroscopic measurements of SIMOX subjected to supplemental oxygen implantation and standard 1OOO" C post implantation annealing. Point contact transistor measurements indicate that the supplement a l oxygen implantation creates a net increase in radiationinduced trapped charge, and, surprisingly, electron paramagnetic resonance studies show that the 0 vacancy concentration increases. The electron paramagnetic resonance results suggest that the radiation tolerance of the supplemental oxides is due to insufficiently annealed implantation damage. A higher post supplemental anneal temperature minimizes the radiation-induced trapped charge, but further studies are necessary to assess the total impact of the high temperature anneal. I. BACKGROUNDSilicon on Insulator (SOI), a layered structure consisting of an SiO, film buried between two layers of Si, is a promising technology for providing device isolation for several new applications such as high speed, low power CMOS and high voltage devices. In addition, the buried oxide minimizes radiation-induced problems such as single event upset and dose-rate induced latchup [ll. Also, by lowering the capacitance the device speed is increased and power consumption decreased [21. Separation by the Implantation of Oxygen (SIMOX), one technique for forming the buried oxide, produces an oxide layer startlingly similar to a device grade thermal oxide. However, some studies suggest that excess Si exists in the buried oxide [3], and it is believed that this is responsible for some device related problems. For this reason, attempts to improve the oxide quality have focused on the implantation of additional oxygen followed by a standard 1 hour 10oO" C implantation anneal after the SIMOX process. Such oxides are referred to as supplemental oxides.In the past, both electrical and spectroscopic studies have been employed to investigate the buried oxide formed by ion implantation. Analysis of transistor current-voltage measurements following pulsed irradiation show that, unlike standard thermal oxides, buried oxides exhibit a high density of trapped holes and shallow electron trapping [4]. Such charge densities have indirect influence on CMOS/SIMOX devices and direct influence on fully depleted devices. Capacitance-voltage measurements made as a function of low temperature x-ray irradiation also indicate that high temperature annealed buried oxides contain a higher density of hole traps and shallow electron traps than device grade thermal oxides [5].

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Evidence for a deep electron trap and charge compensation in separation by implanted oxygen oxides

Cited by 31 publications

References 25 publications

Photoluminescence and absorption in multi-energy Ge implanted type III silica

Photoluminescence and absorption in multi-energy Ge implanted type III silica

Observation and electronic characterization of two E′ center charge traps in conventionally processed thermal SiO2 on Si

Effect of supplemental O implantation on the radiation-induced hole traps in SIMOX buried oxides

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