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Articles you may be interested inFundamental reliability of 1.5 nm -thick silicon oxide gate films grown at 150 ° C by modified reactive ion beam deposition J. Vac. Sci. Technol. A 26, 36 (2008); 10.1116/1.2812430Correlation between density and oxidation temperature for pyrolytic-gas passivated ultrathin silicon oxide films

The effect of implantation dose on microstructural development of the buried oxide (BOX) of 200 keV oxygen implanted Si was studied by electron microscopy. A continuous BOX layer with a low density of Si islands was obtained for a dose of 0.45×1018 cm−2, following high temperature annealing. At a lower dose of 0.225×1018 cm−2 a layer did not form, but only disjointed, isolated, oxide precipitates developed. At a higher dose, 0.675×1018 cm−2, a continuous BOX layer with a high density of Si islands formed. Microstructures of intermediate-temperature annealed samples showed the formation of oxide precipitates at preferred depths, the morphology being dose dependent. The final microstructure of the BOX is strongly influenced by the evolution of the oxide precipitates during annealing. A qualitative mechanism is proposed for the dose-dependent behavior of BOX formation during the annealing process.

Electron spin resonance characterization and localization of a thermally generated donor inherent to the separation by implantation of oxygen process J. Appl. Phys. 73, 876 (1993); 10.1063/1.353300Prich Si particles in separation by implanted oxygen structures revealed by lowtemperature electronspin resonance

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