Evidence for a new passivating indium rich phosphate prepared by ultraviolet/ozone oxidation of InP

Abstract

Using x-ray photoelectron spectroscopy (XPS), it is demonstrated that noncrystalline thin oxide layers grown on InP by ultraviolet (UV)/ozone oxidation are composed of a single phase of phosphate average composition InP0.5O2.75 which do not exist as crystalline compounds. The ability of nonstoichiometric InP native oxides to passivate InP surfaces is discussed on the basis of these new findings.

Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation

“…This high concentrated HF has been proved to produce the best deoxidized InP surface when implemented for heteroepitaxial bonding of InP on Si. 14,15 In the case of the wet oxidation [ Fig. Wet oxidation is performed by dipping the InP wafer during 1 mn in pure H 2 SO 4 , and then rinsing abundantly.…”

“…Since plasma-activated oxide surfaces have been reported to be damaged thus becoming porous and containing more water, 9,10 we have considered here ozone activation to produce the surface -OH links. 14,15 A quantitative measurement that could assess the activation of the surface is very difficult to implement. 18 Ozone has also been investigated to master the oxide formation at the InP surface in order to control the InP surface passivation.…”

Fields of Ozone Applications

“…An evidence for a new passivating indium rich phosphate prepared by UV/O 3 oxidation of indium phosphide, InP, is provided in [185]. The phosphate does not exist as crystal compound and its composition is InP 0.5 O 2.75 .…”

New optical transition, structural, and ferromagnetic properties of InCrP:Zn implanted with Cr

“…According to theory based on Mn [3], InP which has good optical properties in compound semiconductors is also a possible DMS. The incorporation of Mn into InP is of considerable interest because InMnP has been theoretically predicted to form a proper DMS based on hole-mediated ferromagnetism and furthermore because the host material InP has potential applications for optoelectronics and high-speed electronic devices [4,5]. The physical properties of InMnP have already been studied as DMSs based on InP [6][7][8][9][10] and continue to investigate various characteristics in order to enhanced Curie temperature without clusters.…”