Evidence for random networks of diodes in thin films of LaVO3 on SrTiO3 substrates

Abstract

Articles you may be interested inOxygen vacancies-induced metal-insulator transition in La2/3Sr1/3VO3 thin films: Role of the oxygen substrate-to-film transfer Evidence of direct correlation between out-of-plane lattice parameter and metal-insulator transition temperature in oxygen-depleted manganite thin films Appl. Phys. Lett. 100, 042404 (2012); 10.1063/1.3676268 Magnetotransport properties of c -axis oriented La 0.7 Sr 0.3 MnO 3 thin films on MgO-buffered SiO 2 / Si substrates J. Appl. Phys. 105, 07D711 (2009); 10.1063/1.3065974 Polycrystalline and laminated La 0.7 Sr 0.3 MnO 3 films made by pulsed laser depositionHighly conducting interfaces of transition metal oxide heterolayers could provide a promising access to transition metal oxide based electronic devices similar to those based on semiconductor heterostructures. Recently, metallic conductivity has been reported at the LaAlO 3 / SrTiO 3 heterointerface. Here we report the observation of diodelike behavior and the formation of a random diode network in thin films of LaVO 3 deposited on as-polished SrTiO 3 substrates. Depending on films annealing conditions we observed linear or nonlinear I-V characteristic below 50 K.

Probing orbital ordering in LaVO3 epitaxial films by Raman scattering

“…22 The stabilization of the perovskite LaVO 3 phase in thin films was successful by performing the growth in either high vacuum 4,5,[7][8][9]22 or in pure Ar or Ar/H 2 atmosphere. 9,21 We fabricated the films by PLD using a KrF excimer laser. The chamber was evacuated down to less than 10 −7 mbar.…”

“…Epitaxial growth of LaVO 3 films has been achieved by a variety of techniques, predominantly by PLD 4,5,[7][8][9]21 or by molecular beam epitaxy. 22 The stabilization of the perovskite LaVO 3 phase in thin films was successful by performing the growth in either high vacuum 4,5,[7][8][9]22 or in pure Ar or Ar/H 2 atmosphere.…”

“…Temperature-dependent dc resistivity measurements of LaVO 3 single crystals show the onset of the G-type OO by the kinks in the curve, occurring at 141 K. 1 However, no similar kinks have been observed or reported for resistivity data on thin film LaVO 3 samples on various substrates. 4,[7][8][9]21 A convenient method to study the OO transition in bulk LaVO 3 is Raman spectroscopy. The Raman spectra of LaVO 3 show the activation of a characteristic band at 719 cm −1 (89 meV) below the OO transition.…”

Growth and Characterization of Off-Stoichiometric LaVO$_3$ Thin Films

“…We can rule out heating as a source of nonlinearity in the low temperature I-V curves by performing a Joule heating analysis similar to the one reported in Padhan et al 51 (see Supplemental Materials for details). Razavi et al reported similar upturns in resistivity and non-linear I-V characteristics at low temperature, they attributed it to the formation of random diode networks in their LVO thin films 52 . They report that the observed nonlinear behavior happened only in the films with relatively small values for c (close to that of the STO substrate) and it would disappear when the films be-come insulating as the lattice parameter of the film became larger (1% larger than that of STO).…”