Ferroelectrics are materials exhibiting spontaneous electric polarization due to dipoles formed by displacements of charged ions inside the crystal unit cell. Their exceptional properties are exploited in a variety of microelectronic applications. As ferroelectricity is strongly influenced by surfaces, interfaces and domain boundaries, there is great interest in exploring how the local atomic structure affects the electric properties. Here, using the negative spherical-aberration imaging technique in an aberration-corrected transmission electron microscope, we investigate the cation-oxygen dipoles near 180 degrees domain walls in epitaxial PbZr(0.2)Ti(0.8)O(3) thin films on the atomic scale. The width and dipole distortion across a transversal wall and a longitudinal wall are measured, and on this basis the local polarization is calculated. For the first time, a large difference in atomic details between charged and uncharged domain walls is reported.

Low-dimensional ferroelectric structures are a promising basis for the next generation of ultrahigh-density nonvolatile memory devices. Depolarization fields, created by incompletely compensated charges at the surfaces and interfaces, depress the polarization of such structures. Theory suggests that under conditions of uncompensated surface charges, local dipoles can organize in flux-closure structures in thin films and vortex structures in nano-sized ferroelectrics, reducing depolarization fields. However, the continuous rotation of the dipoles required in vortex structures and the behavior of unit cell dipoles in flux-closure structures have never been experimentally established. By aberration-corrected transmission electron microscopy, we obtained experimental evidence for continuous rotation of the dipoles closing the flux of 180° domains in a ferroelectric perovskite thin film.

Macroscopic ferroelectric polarization switching, similar to other first-order phase transitions, is controlled by nucleation centres. Despite 50 years of extensive theoretical and experimental effort, the microstructural origins of the Landauer paradox, that is, the experimentally observed low values of coercive fields in ferroelectrics corresponding to implausibly large nucleation activation energies, are still a mystery. Here, we develop an approach to visualize the nucleation centres controlling polarization switching processes with nanometre resolution, determine their spatial and energy distribution and correlate them to local microstructure. The random-bond and random-field components of the disorder potential are extracted from positive and negative nucleation biases. Observation of enhanced nucleation activity at the 90 composite function domain wall boundaries and intersections combined with phase-field modelling identifies them as a class of nucleation centres that control switching in structural-defect-free materials.

Ferroelectric single–crystalline PbZr0.2Ti0.8O3 thin films, free from extended defects, are grown by pulsed laser deposition onto vicinal SrTiO3(001) single crystals. The PbZr0.2Ti0.8O3 films are strained and exhibit enhanced tetragonality, c/a ≈ 1.06. They have a remnant polarization, Pr ≈ 110 μC cm–2, dielectric constant, ϵ33 ≈ 90, and piezoelectric coefficient, d33, up to 50 pm V–1 (see figure).

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