Evidence for strain relaxation via composition fluctuations in strained quaternary / quaternary and quaternary / ternary multiple quantum well structures

Bangert, U.; Harvey, A. J.; Wilkinson, V. A.; Dieker, C.; Jowett, John; Smith, A. D.; Perrin, S.D.; Gibbins, C.J.

doi:10.1016/0022-0248(93)90267-z

Cited by 16 publications

(7 citation statements)

References 9 publications

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“…The strain compensated structures also show an anisotropic behavior, with strong thickness modulations along the [011] direction. Our results confirm the anisotropic behavior of strain compensated structures obtained by Gas Source Molecular Beam Epitaxy (GSMBE) 4 and LP-MOVPE 5,6 .…”

Section: Introductionsupporting

confidence: 85%

Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy

Carvalho¹,

Bernussi²,

Furtado³

et al. 1999

Mat. Res.

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We have investigated the optical and the structural properties of strained In1-xGaxAsyP1-y/InP and strain compensated In1-xGaxAsyP1-y/In1-zGazAsqP1-q/InP multi-quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy at different growth conditions. Our results indicate an increase of the compositional fluctuation of quaternary materials as the alloy composition moves from the outer spinodal isotherm into the miscibility gap region. In1-xGaxAsyP1-y layers grown at high tensile strained values exhibit a three-dimensional-like growth mode. Strain compensated structures revealed the presence of a broad photoluminescence emission band below the fundamental quantum well transition, well defined elongated features along the [011] direction and interface undulations. All these effects were found to be strongly dependent on the growth temperature and the number of wells

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Section: Introductionsupporting

confidence: 85%

Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy

Carvalho¹,

Bernussi²,

Furtado³

et al. 1999

Mat. Res.

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“…In the literature TEM measurements have been used to determine the transition between a 2D and 3D growth regime and the relaxation mechanisms that can occur in MQW stacks for settle high strains, as a function of the growth temperature [22,23]. In the cross-sectional TEM analyses carried out on these samples, no evident waving or relaxation pathways have been found.…”

Section: Article In Pressmentioning

confidence: 97%

“…A few attempts have been made in order to improve the material quality of NGW150. These samples have been grown to repeat experiments previously reported in the literature: the InP or quaternary material insertions between well and barrier or growth interruptions were used to improve the interface abruptness damaged by the high strain [12][13][14][15][21][22][23]. Neither the introduction of InP monolayers (NGW 152) nor 1-s growth interruption (NGW 153) improved the material quality.…”

Section: Article In Pressmentioning

confidence: 99%

Strain effects on highly strained InAsP/InGaP multi-quantum well structures grown by MOVPE using TBAs and TBP

Campi

Codato

Soldani

2004

Journal of Crystal Growth

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“…This behavior follows the degradation trend reported for wavy layer growth in previous studies. 4,8 However, the band B was absent from PL spectra of single quaternary layers of compressive and tensile strained materials. 14 We speculate that this band is possibly related to defects generated at the barriers and wells interfaces by the onset of wavy layer growth.…”

Section: Resultsmentioning

confidence: 97%

“…Nevertheless, they exhibit partial elastic relaxation prior to the generation of misfit dislocations through the formation during growth of step bunching over terraces 3 and three dimensional growth. 4 In addition, the growth of tensile strained barrier layers may be affected by the miscibility gap of the quaternary InGaAsP material, 5,6 because the solid alloy is unstable for a range of compositions and growth temperatures. Such relaxation mechanisms produce undulations at the ZNS-MQW interfaces, which have been attributed to thickness, strain and compositional modulations.…”

Section: Introductionmentioning

confidence: 99%

Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPE

Carvalho

Furtado

Bernussi

et al. 2000

Journal of Elec Materi

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We investigated the influence of the growth rate on the quality of zero-netstrained InGaAsP/InGaAsP/InP multiquantum well structures for 1.55 µm emission grown by low pressure metalorganic vapor phase epitaxy. The samples consisted of fixed compressive strained wells (ε = +1%) and tensile strained barriers (ε = -0.5%) grown with different quaternary bandgap wavelengths (λ B = 1.1-1.4 µm). Using higher growth rates, we obtained for the first time high quality zero net strained multi quantum well structures, regardless having constant group V composition in the well and barriers. The samples were analyzed by x-ray diffraction, photoluminescence and atomic force microscopy techniques. The amplitude of surface modulation roughness along [011] direction decreased from 20 nm to 0.53 nm with increasing growth rate and/or quaternary compositions grown outside the miscibility gap. A new deep PL broad emission band strongly correlated with the onset of wavy layer growth is also reported. Broad area and ridge waveguide lasers with 10 wells exhibited low losses (34 cm -1 ) and low threshold current densities at infinite cavity length (1020 A·cm -2 and 1190 A·cm -2 , respectively).

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Evidence for strain relaxation via composition fluctuations in strained quaternary / quaternary and quaternary / ternary multiple quantum well structures

Cited by 16 publications

References 9 publications

Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy

Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy

Strain effects on highly strained InAsP/InGaP multi-quantum well structures grown by MOVPE using TBAs and TBP

Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPE

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