Evidence of a strong perpendicular magnetic anisotropy in Au/Co/MgO/GaN heterostructures

Gao, Xue; Yang, Baishun; Devaux, Xavier; Yang, Haolin; Liu, Jianping; Liang, Shiheng; Stoffel, M.; Pasquier, L.; Hyot, Bérangère; Grenier, Adeline; Bernier, Nicolas; Migot, Sylvie; Mangin, Stéphane; Rinnert, H.; Jiang, Chunping; Zeng, Zhongming; Tang, Ning; Sun, Qian; Ding, Sunan; Yang, Hui; Lu, Yuan

doi:10.1039/c9na00340a

Cited by 5 publications

(3 citation statements)

References 55 publications

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“…The enhancement may be interpreted as an improvement of interface PMA at the Co/oxide interface due to diffusion of Pt atoms into the vicinity of the Co/oxide interface. Since the Co/oxide interface exhibits PMA due to hybridization of Co 3 d and O 2 p orbitals despite the weak spin–orbit interaction (SOI) 7 , the incorporation of a heavy metal element with strong SOI, such as Pt, can enhance the interface PMA. Such enhancement of PMA at TM/oxide interface due to heavy mental elements incorporation has been reported both theoretically and experimentally 42 – 45 .…”

Section: Discussionmentioning

confidence: 99%

“…It has been studied for applications such as voltage-controlled MRAM 4 , 6 . VCMA effect has been mainly investigated at transition metal (TM) ferromagnet/oxide dielectric interfaces, such as bcc-Fe (001)/MgO and fcc-Co (111)/oxide interfaces, where the hybridisation of TM 3 d and O 2 p orbitals produces a strong interface perpendicular magnetic anisotropy (PMA) 7 – 10 . In particular, bcc-Fe-(001)-based stacks have been investigated extensively and a VCMA coefficient of 350 fJ/Vm has been achieved using high-quality epitaxial films 11 – 13 .…”

Section: Introductionmentioning

confidence: 99%

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Understanding voltage-controlled magnetic anisotropy effect at Co/oxide interface

Nozaki

Okabayashi

Tamaru

et al. 2023

Sci Rep

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The voltage-controlled magnetic anisotropy (VCMA) effect is a key to realising high-speed, ultralow-power consumption spintronic devices. The fcc-Co-(111)-based stack is a promising candidate for the achievement of large VCMA coefficients. However, only a few studies on the fcc-Co-(111)-based stack have been reported and the VCMA effect has not been well understood. Previously, we observed a significant increase in the voltage-controlled coercivity (VCC) in the Pt/Ru/Co/CoO/TiOx structure upon post-annealing. However, the mechanism underlying this enhancement remains unclear. This study performs multiprobe analyses on this structure before and after post-annealing and discusses the origin of the VCMA effect at the Co/oxide interface. X-ray magnetic circular dichroism measurement revealed an increase in the orbital magnetic moment owing to post-annealing, accompanied by a significant increase in VCC. We speculate that the diffusion of Pt atoms into the vicinity of Co/oxide interface enhances the interfacial orbital magnetic moment and the VCMA at the interface. These results provide a guideline for designing structures to obtain a large VCMA effect in fcc-Co-(111)-based stacks.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Understanding voltage-controlled magnetic anisotropy effect at Co/oxide interface

Nozaki

Okabayashi

Tamaru

et al. 2023

Sci Rep

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“…The current spin injectors (GaMnN) [ 99 , 100 ], GaCrN [ 101 ], Fe 3 O 4 [ 102 , 103 ], and CoFe [ 104 , 105 ] without in-plane magnetization anisotropy cannot be used in area dispersion topologies such as 3D displays for deployments of spin-LEDs and spin lasers as shown in Figure 9 a. This is because, in addition to creating light that is spirally oriented from the quantum-well (QW) LED surface, the spin injector’s magnetization must be kept perpendicular to the surface regarding optical directions [ 106 ].…”

Section: Magnetic Storage Applicationsmentioning

confidence: 99%

MgO Heterostructures: From Synthesis to Applications

et al. 2022

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The energy storage capacity of batteries and supercapacitors has seen rising demand and problems as large-scale energy storage systems and electric gadgets have become more widely adopted. With the development of nano-scale materials, the electrodes of these devices have changed dramatically. Heterostructure materials have gained increased interest as next-generation materials due to their unique interfaces, resilient structures and synergistic effects, providing the capacity to improve energy/power outputs and battery longevity. This review focuses on the role of MgO in heterostructured magnetic and energy storage devices and their applications and synthetic strategies. The role of metal oxides in manufacturing heterostructures has received much attention, especially MgO. Heterostructures have stronger interactions between tightly packed interfaces and perform better than single structures. Due to their typical physical and chemical properties, MgO heterostructures have made a breakthrough in energy storage. In perpendicularly magnetized heterostructures, the MgO’s thickness significantly affects the magnetic properties, which is good news for the next generation of high-speed magnetic storage devices.

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Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity

Grishchenko

Dawson

Ghosh

et al. 2023

Journal of Magnetism and Magnetic Materials

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Evidence of a strong perpendicular magnetic anisotropy in Au/Co/MgO/GaN heterostructures

Abstract: We demonstrate that a 4.6 nm thick Co film grown on MgO/GaN still exhibits a large perpendicular magnetic anisotropy.

Cited by 5 publications

References 55 publications

Understanding voltage-controlled magnetic anisotropy effect at Co/oxide interface

Understanding voltage-controlled magnetic anisotropy effect at Co/oxide interface

MgO Heterostructures: From Synthesis to Applications

Magnetic properties of nickel electrodeposited on porous GaN substrates with infiltrated and laminated connectivity

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