Evidence of deep-level defects in an MQW electroabsorption modulator through current-voltage and electrical noise characterization

Gautier, Cynthia R.; Orsal, B.; Devoldére, P.

doi:10.1109/3.798087

Cited by 5 publications

(1 citation statement)

References 12 publications

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“…So, this possibility is ruled out. In fact, tunnelling is known to be the most important mechanism by which the free carriers contribute to the current [10]. In fact, the slopes of our log I versus V curves measured with forward bias do not change as a function of temperature, confirming that a tunnelling effect assisted by recombination centres occurs.…”

Section: Resultssupporting

confidence: 50%

AnomalousIversusVcharacteristics of InGaAs/InAlAs strained multiple quantum well structures for amplitude modulators

Pires¹,

Guastavino²,

Yavich³

et al. 2003

Semicond. Sci. Technol.

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Amplitude modulator pin diodes containing an InGaAs/InAlAs multiple quantum well structure were studied. It often happens that no photocurrent is observed for such structures when measurements are carried out at low temperatures. In order to determine the origin of this anomaly, their I versus V characteristics were investigated as a function of temperature and of the energy of the incident radiation. It is found that the reason for that is the existence of carrier traps either at the interfaces or within the quantum wells, which prevent the generation of a photocurrent. Moreover, the traps' activation energy correlates with the Ga content in the InGaAs quantum well alloy.

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Section: Resultssupporting

confidence: 50%

AnomalousIversusVcharacteristics of InGaAs/InAlAs strained multiple quantum well structures for amplitude modulators

Pires¹,

Guastavino²,

Yavich³

et al. 2003

Semicond. Sci. Technol.

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Gradual degradation in 980 nm InGaAs/AlGaAs pump lasers

Bettiati

Starck

Pommiès

et al. 2002

Materials Science and Engineering: B

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Correlation between dark current RTS noise and defects for AlGaInP multiple-quantum-well laser diode

Liu

Wenlang

2014

J. Semicond.

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The correlation model between dark current RTS noise and defects for AlGaInP multiple-quantum-well laser diode is derived. Experimental results show that dark current RTS noise caused carrier number fluctuations at the interface of the heterojunction in the active region. According to this correlation model, the defect types are determined, and the defects' energy levels are quantitatively determined. The corner frequency of RTS noise power spectral density is analyzed. The experimental results are in good agreement with the theoretical. This result provided an effective method for estimating the deep-level traps in the active region of AlGaInP multiple quantum well laser diode.

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Evidence of deep-level defects in an MQW electroabsorption modulator through current-voltage and electrical noise characterization

Cited by 5 publications

References 12 publications

AnomalousIversusVcharacteristics of InGaAs/InAlAs strained multiple quantum well structures for amplitude modulators

AnomalousIversusVcharacteristics of InGaAs/InAlAs strained multiple quantum well structures for amplitude modulators

Gradual degradation in 980 nm InGaAs/AlGaAs pump lasers

Correlation between dark current RTS noise and defects for AlGaInP multiple-quantum-well laser diode

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