The Cd,Hg, -;re avalanche photodiodes present hole or electron majority mu!!iplicationi depending on the r valuesl with a ratio of infiizattion fa.ctQrs k = ?,I%, maximum for x = 0.6 and minimum for x = 0.4. This behaviour is explained by a simulation of the multiplication phenomenon. Monte Carlo electron traiectories are averaged to obtain ionization factors ah and G. This model introduces a linear relationship between the logarithm of k and the ionization energy difference for holes and electrons: AE, = E,, -E,-. We compute this energy difference in an empirical tight binding band structure and show that its variation versus x agrees with experimental k(x) variations. The hole multiplication maximum at x = 0.6 is explained as the effect of transitions issued from the

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