Hg/sub 0.56/ Cd/sub 0.44/ Te 1.6- to 2.5- mu m avalanche photodiode and noise study far from resonant impact ionization

Orsal, B.; Alabédra, R.; Maatougui, A. H.; Flachet, J.C.

doi:10.1109/16.119010

Cited by 12 publications

(14 citation statements)

References 11 publications

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“…Planar p-i-n Hg 0.56 Cd 0. 44 Te APD in 1.6-2.5 mm range was also demonstrated using electron and hole injection multiplication processes separately and concluded that (i) electron injection yields relatively lower excess noise factor as compared to hole injection and (ii) hole-initiated APD requires higher reverse bias to initiate the avalanche process [24]. Hall et al [16] also concurred with these results.…”

Section: Introductionmentioning

confidence: 71%

“…The physics of avalanche multiplication in HgCdTe was initially explained by the French groups to develop HgCdTe APD for short wave infrared detection [14,15,[22][23][24]. The energy band structure of HgCdTe is depicted in Fig.…”

Section: Impact Ionization Processmentioning

confidence: 99%

“…Initial development efforts in HgCdTe APDs were limited to the SWIR region for telecommunication applications [21][22][23][24][25][26][27]. Shin et al [21] reported the fabrication of a planar HgCdTe/CdTe APD (l c ¼1.22 mm).…”

Section: Introductionmentioning

confidence: 98%

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HgCdTe avalanche photodiodes: A review

Singh

Srivastav

Pal

2011

Optics & Laser Technology

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Section: Introductionmentioning

confidence: 71%

Section: Impact Ionization Processmentioning

confidence: 99%

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HgCdTe avalanche photodiodes: A review

Singh

Srivastav

Pal

2011

Optics & Laser Technology

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“…[7][8][9][10][11][12][13][14] The relative advantages of the HgCdTe energy-band structure for both electron-and holeinitiated APDs were elucidated through the theoretical analyses of Leveque et al 14 They describe two regimes in which the ratio k = a h /a e of the hole ionization coefficient a h to the electron ionization coefficient a e is either much greater than unity or much less than unity. For cutoff wavelengths shorter than approximately 1.9 lm (x = 0.56 at 300 K), they predict that a h ) a e because of resonant enhancement of the hole ionization coefficient when the energy bandgap is near or equal to the spin-orbit splitting energy D 0 (=0.938 eV from Ref.…”

Section: Historical Backgroundmentioning

confidence: 99%

Characterization of HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiodes

Reine

Marciniec

Wong

et al. 2008

Journal of Elec Materi

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This article reports new characterization data for large-area (250 lm · 250 lm) back-illuminated planar n-on-p HgCdTe electron-initiated avalanche photodiodes (e-APDs). These e-APDs were fabricated in p-type HgCdTe films grown by liquid-phase epitaxy (LPE) on CdZnTe substrates. We previously reported that these arrays exhibit gain that increases exponentially with reverse bias voltage, with gain-versus-bias curves that are quite uniform from element to element, and with a maximum gain of 648 at -11.7 V at 160 K for a cutoff wavelength of 4.06 lm. Here we report new data on these planar e-APDs. Data from a third LPE film with a longer cutoff wavelength (4.29 lm at 160 K) supports the exponential dependence of gain on cutoff wavelength, for the same bias voltage, that we reported for the first two films (with cutoffs of 3.54 lm and 4.06 lm at 160 K), in agreement with BeckÕs empirical model for gain versus voltage and cutoff wavelength in HgCdTe e-APDs. Our lowest gain-normalized current density at 80 K and zero field-of-view is 0.3 lA/cm 2 at -10.0 V for a cutoff of 4.23 lm at 80 K. We report data for the temperature dependence of gain over 80 K to 200 K. We report, for the first time, the dependence of measured gain on junction area for widely spaced circular diodes with radii of 20 lm to 175 lm. We interpret the variation of measured gain with junction area in terms of an edge-enhanced electric field, and fit the data with a two-gain model having a lower interior gain and a higher edge gain. We report data for the excess noise factor F(M) near unity for gains up to 150 at 196 K. We describe the abrupt breakdown phenomenon seen in most of our devices at high reverse bias.

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“…The reported research on HgCdTe APDs has, so far, been focused on telecom wavelength, [11][12][13][14] SWIR and MWIR [2][3][4][5][6][7][8][9] APDs. Impact ionization in LWIR photodiodes was first studied by Elliott et al 10 in 1990 and then by Beck et al 3 and Vaidyanathan et al 4 …”

Section: Introductionmentioning

confidence: 99%

Experimental Performance and Monte Carlo Modeling of Long Wavelength Infrared Mercury Cadmium Telluride Avalanche Photodiodes

Derelle

Bernhardt

Haïdar

et al. 2009

Journal of Elec Materi

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We evaluated the performance of long-wavelength infrared (LWIR, k c = 9.0 lm at 80 K) mercury cadmium telluride electron-injected avalanche photodiodes (e-APDs) in terms of gain, excess noise factor, and dark current, and also spectral and spatial response at zero bias. We found an exponential gain curve up to 23 at 100 K and a low excess noise factor close to unity (F = 1-1.25). These properties are indicative of a single carrier multiplication process, which is electron impact ionization. The dark current is prevailed by a diffusion current at low reverse bias. However, tunneling currents at higher reverse bias limited the usable gain. The measurements of the pixel spatial response showed that the collection width, and, especially, the amplitude of the response peak, increased with temperature. Furthermore, we developed a Monte Carlo model to understand the multiplication process in HgCdTe APDs. The first simulation results corroborated experimental measurements of gain and excess noise factor in mid-wavelength infrared (MWIR, x = 0.3) and LWIR (x = 0.235) e-APDs at 80 K. This model makes it possible for phenomenological studies to be performed to identify the main physical effects and technological parameters that influence the gain and excess noise. The study of the effect of the n À -layer thickness on APD performance demonstrated the existence of an optimum value in terms of gain.

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Hg/sub 0.56/ Cd/sub 0.44/ Te 1.6- to 2.5- mu m avalanche photodiode and noise study far from resonant impact ionization

Cited by 12 publications

References 11 publications

HgCdTe avalanche photodiodes: A review

HgCdTe avalanche photodiodes: A review

Characterization of HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiodes

Experimental Performance and Monte Carlo Modeling of Long Wavelength Infrared Mercury Cadmium Telluride Avalanche Photodiodes

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