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We report on the thermal design and the characterization of InP-based 1.55 µm wavelength large diameter (∼100 µm) optically pumped vertical external cavity surface emitting lasers (OP-VECSELs). The device is thermally optimized for high power (>70 mW) room-temperature (RT) continuous-wave (CW) single-mode operation. Efficient bottom heat dissipation in the 1/2-VCSEL chip is obtained thanks to the use of a hybrid metalmetamorphic GaAs/AlAs mirror integrated to the InP-based active region, and to subsequent soldering on a SiC substrate. A single-mode output power of 77mW is obtained under CW-RT laser operation, limited by the pump power. Moreover thermal simulations and characterizations of the 1/2-VCSEL chip show that even higher power could be obtained at higher pumping levels, using a CVD diamond substrate.

We have analyzed pulse width and timing jitter in passively mode-locked two-section InAs quantum-dot lasers emitting at 1310 nm and have identified two distinct, extensive mode-locked regions with robust short pulses and low timing jitter. A record combination of 2 ps pulses and 25 fs/cycle timing jitter (500 fs, 1-100 MHz), with 1 mW average output power per facet, is demonstrated.

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