Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis

Abstract

Further progress in high-performance microelectronic devices relies on the development of novel materials and device architectures. However, the components and designs that are currently in use have reached their physical limits. Intensive research efforts, ranging from device fabrication to performance evaluation, are required to surmount these limitations. In this paper, we demonstrate that the superior bipolar resistive switching characteristics of a CeO2:Gd-based memory device can be manipulated by means of UV radiation, serving as a new degree of freedom. Furthermore, the metal oxide-based (CeO2:Gd) memory device was found to possess electrical and neuromorphic multifunctionalities. To investigate the underlying switching mechanism of the device, its plasticity behaviour was studied by imposing weak programming conditions. In addition, a short-term to long-term memory transition analogous to the forgetting process in the human brain, which is regarded as a key biological synaptic function for information processing and data storage, was realized. Based on a careful examination of the device’s retention behaviour at elevated temperatures, the filamentary nature of switching in such devices can be understood from a new perspective.

Halide Perovskites: A New Era of Solution‐Processed Electronics

“…Most resistive random‐access memory (RRAM) devices are based on a plethora of inorganic materials, including binary oxides, perovskite oxides, nitrides, and chalcogenides. [ 238–247 ] Recently, the emerging perovskites are considered as competitive materials for low cost wafer‐scale [ 248 ] and highly mechanical‐flexible RRAM devices. [ 249 ] The most common perovskite used for RRAM applications are 3D perovskites including MAPbI 3 , [ 22,225,227,235,250–259 ] MAPbCl 3 , MAPbBr 3 , [ 260,261 ] and CsPbBr 3 .…”

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

“…As it can go through repeatable redox (Ce +3 /Ce +4 ) cycles based on reduction of cerium from Ce +4 to Ce +3 . Importance of CeO 2 is not only due to accepting/discharging oxygen ions but also due to the valency change between Ce +4 to Ce +3 states91011.…”

Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects

“…In fact, there are many factors that affect the formation and disruption of conductive filaments, including electrode size, electrode activity, and functional layer thickness . On the other hand, different materials have different storage mechanisms for memory devices.…”