Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n–GaN Schottky diode

Amor, Sarrah; Ahaitouf, Ali; Salvestrini, Jean Paul; Ougazzaden, A.

doi:10.1016/j.spmi.2016.11.011

Cited by 5 publications

(1 citation statement)

References 23 publications

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“…The minority carrier traps could be investigated using optical deep level transient spectroscopy (ODLTS) [19,20] or minority carrier transient spectroscopy (MCTS) [21,22] to boost the minority carrier concentration. Polyakov et al identified hole traps with activation energies of 0.7 and 0.9 eV in n-GaN SBDs grown on sapphire substrates using ODLTS [23,24] .…”

Section: Introductionmentioning

confidence: 99%

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Sui,

Chen,

et al. 2024

J. Semicond.

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Emission and capture characteristics of a deep hole trap (H1) in n-GaN Schottky barrier diodes (SBDs) have been investigated by optical deep level transient spectroscopy (ODLTS). Activation energy (E emi) and capture cross-section (σ p) of H1 are determined to be 0.75 eV and 4.67 × 10−15 cm2, respectively. Distribution of apparent trap concentration in space charge region is demonstrated. Temperature-enhanced emission process is revealed by decrease of emission time constant. Electric-field-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission (PFE) model. In addition, H1 shows point defect capture properties and temperature-enhanced capture kinetics. Taking both hole capture and emission processes into account during laser beam incidence, H1 features a trap concentration of 2.67 × 1015 cm−3. The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.

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