1992
DOI: 10.1116/1.577726
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Evidence of Si–OH species at the surface of aged silica

Abstract: Synchrotron radiation (SR) photoemission and x-ray photoelectron spectroscopy (XPS) are used to reveal the presence of Si–OH species at the surface of aged silica. SR Si 2p spectra, recorded in the photon energy range 130 eV≤hν≤240 eV, show the coexistence of Si–O bonding states and Si–OH bonding states, the latter being marked by a component at 105.2 eV in binding energy. The intensity ratio I[Si–OH]/I[Si–O] varies monotonically from 0.24 to 0.77 with increasing photoelectron kinetic energy from 15 to 135 eV,… Show more

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Cited by 61 publications
(38 citation statements)
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“…Using X-rays from a synchrotron source, such features were also observed in the high-resolution Si 2p spectrum of a silicon wafer at ca. 105.2 eV, while Si-O-Si bonds were found at 103.8 eV [21]. Conventional XPS studies are not suitable to show the presence of those surface groups (Figs 2 and 3) [21].…”
Section: Resultsmentioning
confidence: 96%
See 1 more Smart Citation
“…Using X-rays from a synchrotron source, such features were also observed in the high-resolution Si 2p spectrum of a silicon wafer at ca. 105.2 eV, while Si-O-Si bonds were found at 103.8 eV [21]. Conventional XPS studies are not suitable to show the presence of those surface groups (Figs 2 and 3) [21].…”
Section: Resultsmentioning
confidence: 96%
“…105.2 eV, while Si-O-Si bonds were found at 103.8 eV [21]. Conventional XPS studies are not suitable to show the presence of those surface groups (Figs 2 and 3) [21].…”
Section: Resultsmentioning
confidence: 96%
“…By use of X-rays from a synchrotron source, the presence of Si-OH groups has been observed in a high-resolution Si 2p spectrum of a silicon wafer at ca. 105.2 eV, while Si-O-Si bonds were found at 103.8 eV [20,21]. Conventional XPS studies are not suitable to determine the presence of those surface groups [19,20].…”
Section: Si 2p Binding Energiesmentioning
confidence: 99%
“…Normally the peak ascribed to siloxane (Si-O-Si) bonds corresponding to the silicon skeleton in microsilica and the peak ascribed to silanol (Si-OH) bonds are reported to be located at 532 and 533 eV, respectively [7,12,20]. The peak corresponding to non-bridging oxygen is reported to be located at lower binding energies.…”
Section: Si 2p Binding Energiesmentioning
confidence: 99%
“…This binding energy at 103.5 eV is typical for Si-O bonds of SiO surfaces [26][27][28]. The second component peak (G) in the Si 2p spectrum of PCPD-silica is shifted by (13) …”
Section: X-ray Photoelectron Spectroscopymentioning
confidence: 99%