Evidence of storing and erasing of electrons in a nanocrystalline-Si based memory device at 77 K

Banerjee, Saswata; Huang, Shaoyun; Yamanaka, T.; Oda, Shunri

doi:10.1116/1.1481871

Cited by 32 publications

(22 citation statements)

References 14 publications

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“…However, both the random distribution of nc-Si dots on a large channel area and the size fluctuations of nc-Si dots may also lead to dispersions in programming/erasing speeds and DV th(FB) . A narrow/ short channel, which is smaller than Debye length of electron in silicon, was developed to compensate for the randomly deposited nc-Si dots by containing several sizeuniformed nc-Si dots only [44].…”

Section: Storing Charges With Multiple Nc-si Dotsmentioning

confidence: 99%

Silicon Nanocrystal Flash Memory

Oda

Huang

2010

Silicon Nanocrystals

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Section: Storing Charges With Multiple Nc-si Dotsmentioning

confidence: 99%

Silicon Nanocrystal Flash Memory

Oda

Huang

2010

Silicon Nanocrystals

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“…It has gradually become clear that to have an improved and reliable device performance, it is necessary to have a short and narrow channel with an active area containing a few nc-Si dots with a well-defined size distribution. In a previous paper [7], we briefly reported the operation of an ideal short and narrow channel nc-Si-based memory device at liquid nitrogen temperature, where it was pointed out that current-voltage ( -) measurements could be an effective tool to experimentally observe electron trapping-detrapping events associated with the nc-Si dots. Though participation of a single nc-Si dot among several nc-Si dots in the active area was concluded, effects of the neighboring dots were not apparent.…”

Section: Introductionmentioning

confidence: 99%

Operation of nanocrystalline-silicon-based few-electron memory devices in the light of electron storage, ejection, and lifetime characteristics

Banerjee

Huang

Oda

2003

IEEE Trans. Nanotechnology

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A metal-oxide-semiconductor field-effect transistor memory device using nanocrystalline Si (nc-Si) dots as a floating gate over a short and narrow channel has been fabricated. Its operation at 77 K presents experimental evidence of storing and ejection of electrons associated with the nc-Si dot in the active area of the device. Though the lifetime of a single electron is apparently longer than the case when it is associated with another electron in the same nc-Si dot, a distribution in lifetime has been generally observed for the stored electrons in the nc-Si dots with the present memory devices.

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“…Recently, single electron tunneling (SET) and Coulomb charging phenomena in metal-oxide-semiconductor (MOS) structure containing nc-Si in silicon dioxide matrix, which is also called nc-Si floating gate doublebarrier structure (metal/SiO 2 /nc-Si/SiO 2 /Si), has attracted great interest due to its potential application in future nano-electronic devices [1][2][3][4][5]. The nc-Si floating gate double-barrier structure with the principle of direct tunneling and charge storage is a basic unit for nanoelectronic devices, such as single electron memory.…”

Section: Introductionmentioning

confidence: 99%