Evidence of the oxygen vacancies-induced room-temperature ferromagnetism in the (In_0.97−xFe_xSn_0.03)₂O₃films

Composition, valence and oxygen reduction reaction activity of Mn-based layered double hydroxides

“…The average valence of Ni was approximately 2, and that of Mn approximately 3 in Ni-Mn-Fe LDH. The average valence of The spectrum of FeO is adopted from a report [25] after adjusting the energy shift using the spectrum of Fe 2 O 3.…”

“…Figure 3 shows the X-ray absorption spectra of the LDHs for purposes of qualitative discussion concerning the valences of transition metals. We discuss the valence of transition metals by using references; the absorption edges in these references are similar to their positions in past references [24][25][26][27][28][29]. Based on a comparison of the absorption spectra of Ni-Mn-Fe LDH and the standard samples, the average valence of Ni was estimated to be approximately 2 and that of Mn to be approximately 3.…”

Thermoelectric Performance Enhancement of Vanadium Doped n-Type In2O3 Ceramics via Carrier Engineering and Phonon Suppression

“…The survey spectrum demonstrates that only In, V, and O related signal peaks are observable, which confirm high chemical purity in all samples. Spectral lines of the In-3d state have been observed at a binding energy of 443.8 and 451.5 eV as shown in Figure c corresponding to In 3d 3/2 and In 3d 5/2 lines, respectively . The In 3d 3/2 peaks in Figure c for V-doped samples are shifted toward higher binding energy with an increase in the doping concentration.…”

“…Spectral lines of the In-3d state have been observed at a binding energy of 443.8 and 451.5 eV as shown in Figure 1c corresponding to In 3d 3/2 and In 3d 5/2 lines, respectively. 19 The In 3d 3/2 peaks in Figure 1c for V-doped samples are shifted toward higher binding energy with an increase in the doping concentration. This shift is because of contraction in the lattice parameters 20 as calculated from XRD peaks as shown in Table 1.…”

Multimode Operation of Organic–Inorganic Hybrid Thin-Film Transistors Based on Solution-Processed Indium Oxide Films

“…The peaks at 452.2 and 444.7 eV assigned to In 3d 3/2 and In 3d 5/2 , respectively, are in good agreement with those observed for InO x (Figure 1b). 33 The O 1s spectrum shows a broad asymmetric curve and can be deconvoluted into three peaks located at 530.2 eV (blue line), 532.0 eV (orange line), and 533.0 eV (green line) (Figure 1c). 34 The peaks at 532.0 and 533.0 eV belong to absorbed oxygen vacancies and weakly bond oxygen species such as M−OH.…”