The structure of the amorphous fraction and the tensile-compressive stresses in amorphous-crystalline radiation-damaged zircon ZrSiO:U,Th depending on radiation dose and temperature (8-350 K) are investigated according to Raman spectroscopy of Boson peak for the first time. The Boson peak at 60-70 cm À1 associated with localized phonon states in the amorphous fraction ( f a ) is recorded at low temperatures (T < 100 K) for samples with f a < 30% and over the entire temperature range 8-350 K for f a > 70%. The wider localized states distribution in the latter case is considered as a sign of the amorphous phase structure evolution with an increase in radiation dose. The estimates of an atomic correlation radius based on the Ioffe-Regel criterion are similar to those in glasses, R c 2:0 À 2:3 nm. The monotonic increase in R c value during heating of zircon with f a > 70% is governed by thermal expansion of the percolating amorphous fraction. The nonmonotonic variations of the R c value in zircon with f a < 30% is determined by the stresses in the amorphous fraction due to the mismatch in thermal expansion coefficient (CTE) and elastic moduli of the amorphous and crystalline phases depending on temperature; a change in the sign of the crystalline fraction CTE at 30 K is assumed. The Boson peak disappearance at 100 K in zircon with f a < 30% during heating conforms to with the violation of the phonon localization as a consequence of amorphous fraction contraction and partial ordering. The data obtained are important for predicting the thermal and mechanical properties of heterogeneous radiationdamaged materials and nanocomposites.