Amorphous aluminum oxide Al 2 O 3 (a-Al 2 O 3 ) layers grown by various deposition techniques contain a significant density of negative charges. In spite of several experimental and theoretical studies, the origin of these charges still remains unclear. We report the results of extensive Density Functional Theory (DFT) calculations of native defects -O and Al vacancies and interstitials, as well as H interstitial centers -in different charge states in both crystalline α-Al 2 O 3 and in a-Al 2 O 3 . The results demonstrate that both the charging process and the energy distribution of traps responsible for negative charging of a-Al 2 O 3 films [M. B. Zahid et al., IEEE Trans. Electron Devices 57, 2907 (2010)] can be understood assuming that the negatively charged O i and V Al defects are nearly compensated by the positively charged H i , V O and Al i defects in as prepared samples. Following electron injection, the states of Al i , V O or H i in the band gap become occupied by electrons and sample becomes negatively charged. The optical excitation energies from these states into the oxide conduction band agree with the results of exhaustive photo-depopulation spectroscopy (EPDS) measurements [M. B. Zahid et al., IEEE Trans. Electron Devices 57, 2907 (2010)]. This new understanding of the origin of negative charging of a-Al 2 O 3 films is important for further development of nanoelectronic devices and solar cells.

The characteristics of intrinsic electron and hole trapping in crystalline and amorphous AlO have been studied using density functional theory (DFT). Special attention was paid to enforcing the piece-wise linearity of the total energy with respect to electron number through the use of a range separated, hybrid functional PBE0-TC-LRC (Guidon et al 2009 J. Chem. Theory Comput. 5 3010) in order to accurately model the behaviour of localized states. The tuned functional is shown to reproduce the geometric and electronic structures of the perfect crystal as well as the spectroscopic characteristics of Mg hole centre in corundum α-AlO. An ensemble of ten amorphous AlO structures was generated using classical molecular dynamics and a melt and quench method and their structural characteristics compared with the experimental data. The electronic structure of amorphous systems was characterized using the inverse participation ratio method. Electrons and holes were then introduced into both crystalline and amorphous alumina structures and their properties calculated. Holes are shown to trap spontaneously in both crystalline and amorphous alumina. In the crystalline phase they localize on single O ion with the trapping energy of 0.38 eV. In amorphous phase, holes localize on two nearest neighbour oxygen sites with an average trapping energy of 1.26 eV, with hole trapping sites separated on average by about 8.0 Å. No electron trapping is observed in the material. Our results suggest that trapping of positive charge can be much more severe and stable in amorphous alumina rather than in crystalline samples.

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The nature of the amorphous state has been notably difficult to ascertain at the microscopic level. In addition to the fundamental importance of understanding the amorphous state, potential changes to amorphous structures as a result of radiation damage have direct implications for the pressing problem of nuclear waste encapsulation. Here, we develop new methods to identify and quantify the damage produced by high-energy collision cascades that are applicable to amorphous structures and perform large-scale molecular dynamics simulations of high-energy collision cascades in a model zircon system. We find that, whereas the averaged probes of order such as pair distribution function do not indicate structural changes, local coordination analysis shows that the amorphous structure substantially evolves due to radiation damage. Our analysis shows a correlation between the local structural changes and enthalpy. Important implications for the long-term storage of nuclear waste follow from our detection of significant local density inhomogeneities. Although we do not reach the point of convergence where the changes of the amorphous structure saturate, our results imply that the nature of this new converged amorphous state will be of substantial interest in future experimental and modeling work.