Evolution of deep electronic states in ZnO during heat treatment in oxygen- and zinc-rich ambients

Quemener, Vincent; Vines, Lasse; Monakhov, Edouard; Svensson, B. G.

doi:10.1063/1.3693612

Cited by 46 publications

(44 citation statements)

References 22 publications

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“…As for ZnO, many researchers report on the density of states near the CBM by DLTS [24], [25]. There are some defect-like states observed, which are named as E1, E2, E3, and so on.…”

Section: Discussionmentioning

confidence: 99%

In-line Process Monitoring for Amorphous Oxide Semiconductor TFT Fabrication using Microwave-detected Photoconductivity Decay Technique

Okuno

Tao

Morita

et al. 2014

IEICE Trans. Electron.

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SUMMARYWe have investigated the microwave-detected photoconductivity responses from the amorphous In-Ga-Zn-O (a-IGZO) thin films. The time constant extracted by the slope of the slow part of the reflectivity signals are correlated with TFT performances. We have evaluated the influences of the sputtering conditions on the quality of a-IGZO thin film, as well as the influences of gate insulation films and annealing conditions, by comparing the TFT characteristics with the microwave photoconductivity decay (µ-PCD). It is concluded that the µ-PCD is a promising method for in-line process monitoring for the IGZO-TFTs fabrication. key words: oxide semiconductor, thin film transistor, microwave-detected photoconductivity decay, in-line process monitoring

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“…As for ZnO, many researchers report on the density of states near the CBM by DLTS [24], [25]. There are some defect-like states observed, which are named as E1, E2, E3, and so on.…”

Section: Discussionmentioning

confidence: 99%

In-line Process Monitoring for Amorphous Oxide Semiconductor TFT Fabrication using Microwave-detected Photoconductivity Decay Technique

Okuno

Tao

Morita

et al. 2014

IEICE Trans. Electron.

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“…A defect with a similar activation enthalpy to T2 has been observed by Ye et al 12 in Oimplanted melt-grown single crystal ZnO samples annealed in air and Schmidt et al 9 in PLD grown ZnO thin films. This defect was explained as an intrinsic defect but the microscopic origins of this defect were not disclosed 12 Quemener et al 4 also observed a defect E2 with an activation enthalpy and capture cross-section which are almost similar to that of T2 in hydrothermal grown ZnO annealed in oxygen and argon but not in Zn. They attributed the origins of this defect to be impurity related.…”

Section: Introduction Of T2mentioning

confidence: 99%

“…It has also been demonstrated that at some particular temperatures, formation of these deep level defects is ambient related. Quemener et al 4 have investigated the effects of annealing hydrothermally grown ZnO samples at 1100 C in Ar, O 2 , and Zn. Their results have revealed the introduction of E2 whose formation strongly depends on the ambient used.…”

Section: Introductionmentioning

confidence: 99%

A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals

Mtangi

Schmidt

Auret

et al. 2013

Journal of Applied Physics

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We report on the space charge spectroscopy studies performed on thermally treated melt-grown single crystal ZnO. The samples were annealed in different ambients at 700 C and also in oxygen ambient at different temperatures. A shallow donor with a thermal activation enthalpy of 27 meV was observed in the as-received samples by capacitance-temperature, CT scans. After annealing the samples, an increase in the shallow donor concentrations was observed. For the annealed samples, E27 could not be detected and a new shallow donor with a thermal activation enthalpy of 35 meV was detected. For samples annealed above 650 C, an increase in acceptor concentration was observed which affected the low temperature capacitance. Deep level transient spectroscopy revealed the presence of five deep level defects, E1, E2, E3, E4, and E5 in the as-received samples. Annealing of the samples at 650 C removes the E4 and E5 deep level defects, while E2 also anneals-out at temperatures above 800 C. After annealing at 700 C, the T2 deep level defect was observed in all other ambient conditions except in Ar. The emission properties of the E3 deep level defect are observed to change with increase in annealing temperature beyond 800 C. For samples annealed beyond 800 C, a decrease in activation enthalpy with increase in annealing temperature has been observed which suggests an enhanced thermal ionization rate of E3 with annealing. V C 2013 American Institute of Physics. [http://dx

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“…By digitizing the Arrhenius plot, an activation energy around 520 meV and a capture cross section of 5 × 10 −14 cm −2 can be obtained. Contrarily to E2, this level has shown in annealing experiments to be related to Zn-rich conditions [117], and even H-related [95]. Several reports have shown similar energies and capture cross sections [29,48,115,140], with the most recent study, dedicated entirely to this defect having been performed by Hupfer et al [49].…”

Section: E3mentioning

confidence: 97%

“…Electrically, the V O has been assigned to both the commonly observed E3 and E4 levels measured by deep level transient spectroscopy (DLTS) [8,117]. However, due to the charge state and its formation energy, the E3 level is unlikely related to the oxygen vacancy by itself.…”

Section: Oxygen Vacancy (V O )mentioning

confidence: 99%

Deep levels and acceptors in Zn(Mg)O: effect of N-doping

Griñó¹

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Evolution of deep electronic states in ZnO during heat treatment in oxygen- and zinc-rich ambients

Cited by 46 publications

References 22 publications

In-line Process Monitoring for Amorphous Oxide Semiconductor TFT Fabrication using Microwave-detected Photoconductivity Decay Technique

In-line Process Monitoring for Amorphous Oxide Semiconductor TFT Fabrication using Microwave-detected Photoconductivity Decay Technique

A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals

Deep levels and acceptors in Zn(Mg)O: effect of N-doping

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