Non‐photochemical laser‐induced nucleation (NPLIN) has been a growing field of study since 1996, and more than 40 compounds including organics, inorganics and proteins have now been probed under various conditions (solvents, laser types, laser beams etc.). The potential advantages of using this technique are significant, in particular polymorphic control. To realize these benefits, the objective is a carefully designed experimental setup and highly controlled parameters, for example temperature and energy density, in order to reduce the uncertainty regarding the origin of nucleation. In this paper, a new experimental setup designed to study NPLIN is reported. After a full technical description of the present setup, the different functionalities of this device will be illustrated through results on glycine. Glycine crystals obtained through NPLIN nucleate at the meniscus and exhibit different morphologies. The nucleation efficiency, as a function of the supersaturation of the solution used and the laser beam energy density, has also been established for a large number of samples, with all other parameters held constant.

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N-type ZnO samples have been implanted with MeV Zn þ ions at room temperature to doses between 1 Â 10 8 and 2 Â 10 10 cm À2 , and the defect evolution has been studied by capacitance-voltage and deep level transient spectroscopy measurements. The results show a dose dependent compensation by acceptor-like defects along the implantation depth profile, and at least four ion-induced deep-level defects arise, where two levels with energy positions of 1.06 and 1.2 eV below the conduction band increase linearly with ion dose and are attributed to intrinsic defects. Moreover, a re-distribution of defects as a function of depth is observed already at temperatures below 400 K. V

Electronic properties of defects induced by mechanical polishing in hydrothermally grown n-type ZnO have been investigated by capacitance versus voltage measurements and deep level transient spectroscopy (DLTS). The DLTS measurements have been performed in the temperature range 80-600 K enabling exploration of deep-level states in the vicinity of the middle of the energy bandgap. The results show that mechanical polishing forms defects in the near surface region which strongly compensate and/or passivate the dominant shallow donors. Two pronounced polishing-induced defects are revealed with energy level positions around 1.0 eV and 1.2 eV below the conduction band edge. These levels are assigned to vacancy-related defect centers and substantially reduced in strength by post-polishing etching in diluted hydrofluoric acid.