Evolution of Deep Traps in GaN‐Based RF High Electron Mobility Transistors under High Voltage OFF‐State Stress

Li, Min; Huang, Sen; Wang, Xinhua; Guo, Fuqiang; Yao, Yixu; Shi, Jingyuan; Ke, Wei; Liu, Xinyu

doi:10.1002/pssr.202100539

Cited by 5 publications

(3 citation statements)

References 20 publications

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“…[6][7][8][9][10] The wide bandgap offers significant resilience against different forms of electrical overstress such as DC, electrostatic discharge (ESD), RF etc. [11][12][13][14] Therefore, reliability is the key issue which needs to be carefully considered during the process of development or material growth. [15][16][17] In terms of reliability categories, long-term reliability (around 1000 h according to JEDEC standard) at 3temperature DC test and short-term reliability includes step stress test (off-state stress and V DS = 0 V step stress) and DC (<24 h) are most commonly used to determine the device reliability.…”

Section: Introductionmentioning

confidence: 99%

Effect of Stress Voltage and Temperature on the Reliability of AlGaN/GaN HEMTs for RF and Microwave Application

Chakraborty,

Amir,

Hoshi

et al. 2023

Physica Status Solidi (a)

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The mean‐time‐to‐failure (MTTF) of AlGaN/GaN high electron mobility transistor is demonstrated by considering both voltage and temperature dependent electrical degradation in on‐wafer devices. The characteristics of threshold voltage shift (ΔVT) and gate leakage current (Ig_leak) after off‐state step and VDS = 0 step stress test are reported. The devices under test are being DC stressed (high operation life‐time test) in semi‐on‐state conditions at constant power dissipation of 2 W mm−1 for more or less than 200 h until the maximum drain current (Idmax) drops by 15%. Under low stress voltage (10 V), we find activation energies (Ea) and voltage acceleration factor (γ) to be 0.32 eV and 0.09 V−1, respectively, while increasing stress voltage up to 20 V results in increased activation energies of 0.68 and 0.16 eV. The MTTF is estimated to be 1.16 × 104 h at VDS = 20 V, while stressing at low bias gives a high MTTF of 2.20 × 104 h at VDS = 10 V.

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Section: Introductionmentioning

confidence: 99%

Effect of Stress Voltage and Temperature on the Reliability of AlGaN/GaN HEMTs for RF and Microwave Application

Chakraborty,

Amir,

Hoshi

et al. 2023

Physica Status Solidi (a)

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“…However, off‐state biasing may induce highly localized mechanical stress around the electrical field. [ 8 ] Device fabrication and design features can also create stress localization. However, there is no concerted effort to map spatial non‐uniformity of mechanical stress to investigate the effects on transistor characteristics.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High‐Mobility Transistors

Rasel

Stepanoff

Haque

et al. 2022

Physica Rapid Research Ltrs

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Nanoscale localized mechanical stress fields develop unavoidably in microelectronic devices due to structural and processing aspects. Their global average is too small to influence bandgap or mobility, but it is proposed that stress localization can influence defect nucleation sites under radiation. This is investigated on gallium nitride high‐electron‐mobility transistors (GaN HEMTs). Using transmission electron microscopy, we spatially resolved the stress field in the AlGaN layer for both pristine and 10 Mrad gamma‐irradiated HEMTs. The quantitative nanobeam electron diffraction and geometric phase analysis indicate that tensile stressed localizations experience higher radiation‐induced strain. This finding is explained by the tensile stress dependence of the carrier concentration and mobility in the AlGaN layer. Since gamma radiation damage is inflicted by high‐energy electrons only, localized regions of higher tensile stress in the AlGaN layer are expected to be more susceptible to gamma rays.

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“…The current commercial RF devices based on AlGaN/GaN high electron mobility transistors (HEMTs) are usually grown on SiC substrates, whereby the small-size and expensive SiC substrate cost has hampered their larger-scale deployment for cost-sensitive applications, such as mobile phones. Given the large wafer size, low-cost and the great potential for integration with Si complementary metal oxide semiconductor, high-performance AlGaN/GaN HEMTs grown on Si has progressed to a powerful contender for 5G RF front-end applications [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Crack-free 2.2 μm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications

Zhan¹,

Liu²,

Sun³

et al. 2022

J. Phys. D: Appl. Phys.

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The paramount issues facing commercialization of GaN-on-Si RF devices include the inevitable wafer bowing and large thermal resistance when incorporating the conventional AlN/AlGaN multilayer or superlattice buffer for stress control. The large thermal resistance due to the strong phonon scattering by the AlGaN alloy and multiple interfaces of the AlN/AlGaN multilayer or superlattice buffer must be carefully addressed, which can significantly affect the performance and reliability of GaN-on-Si RF devices. In this letter, we report a successful growth of crack-free 2 μm-thick GaN-film on 6-inch high-resistivity (>10 kΩ·cm) Si with a single-layer AlN buffer. By virtue of a Quasi-2D GaN nucleation on the AlN buffer layer, the as-grown GaN-on-Si wafer presents a tremendous reduction in warpage from 800 to less than 8 μm, while preserving a high crystalline quality. The full width at half maximum of X-ray diffraction of GaN (0002) and (10-12) planes are 457 and 509 arcsec, respectively, and the residual stress is as low as 0.2 GPa. The underlying physical mechanisms of the Quasi-2D GaN nucleation layer involved in stress engineering and dislocation annihilation have been discussed in detail. This work paves the way for the fabrication of low-cost and high-performance GaN RF devices grown on HR-Si.

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Evolution of Deep Traps in GaN‐Based RF High Electron Mobility Transistors under High Voltage OFF‐State Stress

Cited by 5 publications

References 20 publications

Effect of Stress Voltage and Temperature on the Reliability of AlGaN/GaN HEMTs for RF and Microwave Application

Effect of Stress Voltage and Temperature on the Reliability of AlGaN/GaN HEMTs for RF and Microwave Application

Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High‐Mobility Transistors

Crack-free 2.2 μm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications

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