Evolution of Metallic Conductivity in Epitaxial ZnO Thin Films on Systematic Al Doping

Chinta, Priya V.; Lozano, Omar; Wadekar, P. V.; Hsieh, Wen-Hsuan; Seo, Hye-Won; Yeh, Sung-Wei; Liao, C. H.; Tu, Li‐Wei; Ho, New-Jin; Zhang, Y. S.; Pang, Wen-Yuan; Lo, Ikai; Chen, Q. Y.; Chu, W. K.

doi:10.1007/s11664-016-5117-x

Cited by 6 publications

(2 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…All samples demonstrate a typical degenerate semiconductor behavior with the weak temperature dependence of the relatively low resistivity. All mixed-doped compositions and Zn0.997Al0.003O show an almost linear increase in resistivity on heating, in accordance with Bloch-Grüneisen model for typical metals [40,41], indicating predominant scattering of the charge carriers by the phonons. Indeed, the values of Debye temperature reported for undoped zinc oxide correspond to 400-440 K [42,43], while doping is expected to shift it to lower temperatures [41].…”

Section: Al Atoms At High Dopant Contentssupporting

confidence: 77%

Synergistic effects of zirconium- and aluminum co-doping on the thermoelectric performance of zinc oxide

Zakharchuk

Tobaldi

Xiao

et al. 2019

Journal of the European Ceramic Society

View full text Add to dashboard Cite

This work aims to explore zirconium as a possible dopant to promote thermoelectric performance in bulk ZnO-based materials, both within the single-doping concept and on simultaneous codoping with aluminum. At 1100-1223 K mixed-doped samples demonstrated around ~2.3 times increase in ZT as compared to single-doped materials, reaching ~0.12. The simultaneous presence of aluminum and zirconium imposes a synergistic effect on electrical properties provided by their mutual effects on the solubility in ZnO crystal lattice, while also allowing a moderate decrease of the thermal conductivity due to phonon scattering effects. At 1173 K the power factor of mixeddoped Zn0.994Al0.003Zr0.003O was 2.2-2.5 times higher than for single-doped materials. Stability tests of the prepared materials under prospective operation conditions indicated that the gradual increase in both resistivity and Seebeck coefficient in mixed-doped compositions with time may partially compensate each other to maintain a relatively high power factor.

show abstract

Section: Al Atoms At High Dopant Contentssupporting

confidence: 77%

Synergistic effects of zirconium- and aluminum co-doping on the thermoelectric performance of zinc oxide

Zakharchuk

Tobaldi

Xiao

et al. 2019

Journal of the European Ceramic Society

View full text Add to dashboard Cite

show abstract

“…The AZO-1.5 and AZO-1.9 films, which were approximately at the optimal doping level, had a larger difference between the N Hall~1 .27 × 10 21 cm −3 and N opt~3 .1 × 10 20 cm −3 . Chinta et al have also found the N Hall value from 4.86 × 10 19 to 2.99 × 10 20 cm −3 and the N opt value from 5.85 × 10 19 to 2.29 × 10 20 cm −3 for constant m* when the ZnO films were doped by Al from 0 to 10 at.% [43]. Figure 13c shows that the two µ opt values calculated using Equation 7and Table 2 were slightly lower because the free carriers scattered the charged donor impurity atoms more frequently under the electrostatic field.…”

Section: Spectroscopic Ellipsometry Studymentioning

confidence: 85%

Comparison of the Optical and Electrical Properties of Al-Doped ZnO Films Using a Lorentz Model

Hsu

Chen

2018

Coatings

View full text Add to dashboard Cite

In this research, zinc oxide (ZnO) films are doped with various amounts of Al dopants, from 0 to 13 at.%, using ion-beam co-sputtering for Zn and Al metallic targets at room temperature. The Al-doped ZnO (AZO) films appear to have lower transmittances in the UV and near-IR ranges. The electrical and optical properties of each film are successfully analyzed by using the spectroscopic ellipsometry of two Lorentz oscillators for the two lower transmittances. The optimal AZO film is deposited with an Al-dopant of 1.5 at.% at an oxygen partial pressure of 0.12 mTorr; it has the smallest resistivity of 7.8 × 10−4 Ω cm and high transmittance of > 80% in the visible regions. The free carrier concentration and mobility evaluated using ellipsometry are different from those measured using the Hall effect. This phenomenon was the result of the grain boundary scattering due to the small ~20-nm grain size of the AZO film used in this study.

show abstract

Properties of ZnO:Al, ZnO:Al–SiO2 Films Obtained in Sol Gel Process from Coating Solutions

2020

View full text Add to dashboard Cite

Evolution of Metallic Conductivity in Epitaxial ZnO Thin Films on Systematic Al Doping

Cited by 6 publications

References 39 publications

Synergistic effects of zirconium- and aluminum co-doping on the thermoelectric performance of zinc oxide

Synergistic effects of zirconium- and aluminum co-doping on the thermoelectric performance of zinc oxide

Comparison of the Optical and Electrical Properties of Al-Doped ZnO Films Using a Lorentz Model

Properties of ZnO:Al, ZnO:Al–SiO2 Films Obtained in Sol Gel Process from Coating Solutions

Contact Info

Product

Resources

About