Evolution of primary phases and high-temperature compressive behaviors of as-cast AuSn20 alloys prepared by different solidification pathways

Tan, Qingbiao; Deng, Chao; Mao, Yong; He, Guo

doi:10.1007/s13404-011-0004-y

Cited by 23 publications

(9 citation statements)

References 26 publications

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“…Under the effect of thermal diffusion, Ni in the heat sink coalesced at the solder/heat sink interface. In these regions, Ni replaced Au in AuSn phase to form (Au,Ni)Sn phase [25] . The gray line on the left part of the interfacial layer at the bottom side of E09 is void, which could be induced during the SEM sample preparation.…”

Section: ↔ ↔ ↔ ↔mentioning

confidence: 99%

Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

Lin¹,

Li²,

Zhang³

et al. 2020

J. Semicond.

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Au80Sn20 alloy is a widely used solder for laser diode packaging. In this paper, the thermal resistance of GaN-based blue laser diodes packaged in TO56 cans were measured by the forward voltage method. The microstructures of Au80Sn20 solder were then investigated to understand the reason for the difference in thermal resistance. It was found that the microstructure with a higher content of Au-rich phase in the center of the solder and a lower content of (Au,Ni)Sn phase at the interface of the solder/heat sink resulted in lower thermal resistance. This is attributed to the lower thermal resistance of Au-rich phase and higher thermal resistance of (Au,Ni)Sn phase.

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Section: ↔ ↔ ↔ ↔mentioning

confidence: 99%

Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

Lin¹,

Li²,

Zhang³

et al. 2020

J. Semicond.

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“…Since these solder joints are expensive, the addition of small amounts of Sb to the binary AuSn solders has been discussed to reduce the costs and to improve the thermomechanical behavior while extra In may reduce the thermal fatigue and increase the ductility [6,7]. The intermetallic compound AuSn is essential for the wetting of the Au-rich solder and is formed as first phase in the solidification of the Sn-rich Au-Sn solder [8][9][10][11][12]. It has been described in the NiAs structure type with lattice parameters of a & 4.32 Å and c & 5.52 Å [13,14].…”

Section: Introductionmentioning

confidence: 99%

Ternary intermetallic compounds in Au–Sn soldering systems—structure and properties

et al. 2015

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The intermetallic compound AuSn is essential for the wetting of Au-rich AuSn solders. On the addition of In or Sb, pseudo-binary compounds AuSn 1-x In x (x B 0.33) and AuSn 1-y Sb y (y B 0.17) are formed. Both adopt the AuSn structure type (P6 3 /mmc, Z = 2). This single-crystal X-ray diffraction study reveals that there is an absence of superstructure ordering upon long-time annealing (years). This behavior constitutes a surprising contrast to the related compounds in the systems Cu-In-Sn and Cu-Sn-Sb. As subsequent total energy calculations disclose, superstructure ordering is neither expected at 0 K nor by the application of high pressure. Hence, decomposition to AuSn and its neighboring phases in the ternary phase diagrams is the only way to release chemical pressure quickly. However, the ternary phases are formed at the expense of the binary compound AuSn, when moving away from the ideal composition. To give an idea how additions of In and Sb will affect the performance of AuSn in the solder joint, we studied the physical properties such as magnetism and resistance as well as mechanical properties such as hardness, elastic modulus, and fracture behavior.

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“…Au-20 wt% Sn eutectic solder (M.P=278°C) and Au-12 wt% Ge eutectic solder (M.P=356°C) are extensively used in high-power electronics and optoelectronics packaging. These Au-based solders feature as good mechanical properties, high electrical and thermal conductivity along with excellent corrosion resistance [18,19]. In this paper, we describe a new method for soldering an Al electrode using Au-based solders together with fabricating a tinny Au bump (∼80 μm diameter) in the Al electrode.…”

Section: Introductionmentioning

confidence: 99%

Soldering of non-wettable Al electrode using Au-based solder

2013

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In manufacturing three-dimensional SiC power modules, the Al electrode of SiC power devices should be soldered to the substrate. However, the Al electrode is difficult to be bonded by a solder due to the naturally formed aluminum oxide on it. In this paper, we describe an effective approach for soldering the non-wettable Al electrode by fabricating a Au-stud bump in the Al electrode together with a Au-20 wt% Sn or Au-12 wt% Ge solder. The soldering initiated at the Au bump and spreaded on the Al electrode. The soldering featured as reactive wetting, realized by the reaction of liquid Au in the Au-base solder and the Al electrode. The activation energy of the Au-20 wt% Sn soldering the Al electrode was Q =159 kJ/mol. A continuous Au 4 Al layer formed at the Au-20 wt% Sn bond interface. The shear strength exceeded 60 MPa, ∼1 order magnitude higher than the required shear strength. For the bond with Au-12 wt% Ge solder on the Al electrode with a Au bump, the liquid Au-12 wt% Ge solder reacted with the solid Al electrode and formed a Au-Ge-Al solid solution after solidification. The shear strength of the Au-12 wt% Ge solder on the Al electrode with a Au bump was beyond 50 MPa. Little electrical characteristics of the SiC-SBD changed after the Al electrode was bonded to a circuit substrate using this technology.

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Evolution of primary phases and high-temperature compressive behaviors of as-cast AuSn20 alloys prepared by different solidification pathways

Cited by 23 publications

References 26 publications

Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

Ternary intermetallic compounds in Au–Sn soldering systems—structure and properties

Soldering of non-wettable Al electrode using Au-based solder

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