Evolution of RFIC Handset PAs

Zhang, G.; Khesbak, Sabah; Agarwal, Arun; Chin, San

doi:10.1109/mmm.2009.935214

Cited by 12 publications

(7 citation statements)

References 23 publications

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“…As the integration level generally is lower for such technologies, commercial PAs for mobile phones often appear in the form of modules where one or several dies are mounted on an organic or ceramic substrate that also contains the output-matching network [37]- [40]. Considering the low price and maturity of GaAs-based PA modules, the advantages of CMOS-based PA modules are not so clear.…”

Section: A Cmos For Wireless Socmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and state-of-the-art results in the literature. To reach watt-level output power from a single-chip CMOS PA, two main strategies can be identified: use of high supply voltage, and use of matching and power combination. High supply voltage limits are closely related to device design in the fabrication process. However, the maximum operating voltage can be improved by amplifier class selection, circuit solutions, and process modifications or mask changes. High output power can also be reached by the use of on-chip matching and power combination, commonly using on-chip transformers. Reliability often sets the limits for the PA design, and PA degradation mechanisms are reviewed. A compilation of state-of-the-art published results for linear and switched wattlevel PAs, as well as a few fully integrated CMOS PAs, is presented and discussed.

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Section: A Cmos For Wireless Socmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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“…The efficiency and linearity trade-offs of a few well-known PA classes are summarized in Table 10.1 [1,8]. All PA designs in this table, except for the class A PA, are nonlinear.…”

Section: Power Amplifier Nonlinearity Behavior and Modelingmentioning

confidence: 99%

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confidence: 99%

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Adaptive digital baseband predistortion

Qian¹,

Zhou²

2011

Digital Front-End in Wireless Communications and Broadcasting

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The radio frequency (RF) power amplifier (PA) is the most power consuming element in a wireless transmission system, and can account for more than 50 percent of the total power consumed by the transmitter [1]. Improving the PA efficiency saves energy and drives down the overall system costs. A study described in [2, p. 13] provides a compelling reason for PA linearization: application of PA linearization technologies can yield annual savings of millions of dollars for a typical network service provider.Efficient PAs are usually nonlinear. Nonlinearity generates both in-band distortion and out-of-band interference, which manifest in terms of transmitter error vector magnitude (EVM) degradation and spectral regrowth. In wireless communication systems, many signal formats, such as Code Division Multiple Access (CDMA) and Orthogonal Frequency Division Multiplexing (OFDM) transmission, have been introduced to improve spectrum efficiency and data rate. However, these non-constant-envelope signals are not power efficient in the presence of nonlinear PAs as large back-offs are needed for linear transmission. In most commercial wireless communication systems, PAs are still the dominant source of signal quality degradation since the PAs are usually biased in a mildly nonlinear region to gain a reasonable amount of efficiency.Power amplifier linearization techniques can be sought to improve the linearity of the PA while still achieving a certain degree of power efficiency. Ideally, after linearization, the linear region of the PA is extended close to the saturation point of the PA, allowing a smaller power back-off than the original PA, which in turn improves the PA power efficiency. Power amplifier linearization has been widely studied. Available techniques include feedback, feedforward, and predistortion [2][3][4][5].Feedback is widely used in control systems. In the context of PA linearization, if we can extract the error signal as the difference between the (scaled) input and output to the PA, a negative feedback system can be constructed by feeding the error signal back to the PA input [6,7]. The gain-bandwidth trade-off and the instability problem, however, limit the feedback linearization performance of RF PAs, especially for wide-band applications.Feedforward linearization reproduces the error signal and compensates for it at the PA output [8]. In contrast, with feedback linearization, the compensation takes place at the Digital Front-End in Wireless Communications and Broadcasting, ed. Fa-

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“…A small multiband and multi-mode power amplifier (PA) module is a key component in the mobile terminals. There have been reports on multi-band PAs [1,2]. A reconfigurable PA, which is integrated on a printed-circuit board (PCB) with the size of 35 x 110 mm 2 [3] or on a multi-layer low temperature co-fired ceramic substrate with the size of 25 x 25 mm 2 [4], has also been reported to provide 9-band operation from 0.7 GHz to 2.5 GHz.…”

Section: Introductionmentioning

confidence: 99%

Compact 1.5GHz to 2.5GHz multi-band multi-mode power amplifier

Furuta

Fukuda

Kawai

et al. 2011

IEICE Electron. Express

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This paper presents a compact multi-band/multi-mode power amplifier (PA) for mobile terminals. The PA is reconfigurable within the size of 6.2 x 8.05 mm 2 and covers the frequency bands for mobile communications from 1.5 GHz to 2.5 GHz. The experimental results in terms of gain, output power, and adjacent channel leakage ratio are very close to those of actually-used single-band PAs in mobile terminals. To the best of our knowledge, this is the first time that a compact PA is presented that is less than 50 mm 2 and covers the 1.5, 1.7, 1.8, 1.9, 2.3, and 2.5-GHz bands for GSM, W-CDMA, and LTE modes. Keywords: multi-band, power amplifier, semiconductor switch Classification: Microwave and millimeter wave devices, circuits, and systems References[1] S. Zhang, J. Madic, P. Bretchko, J. Mokoro, R. Shumovich, and R.McMorrow, "A novel power-amplifier module for quad-band wireless handset applications," IEEE Trans.

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Evolution of RFIC Handset PAs

Cited by 12 publications

References 23 publications

A Review of Watt-Level CMOS RF Power Amplifiers

A Review of Watt-Level CMOS RF Power Amplifiers

Adaptive digital baseband predistortion

Compact 1.5GHz to 2.5GHz multi-band multi-mode power amplifier

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