Evolution of structural and optical properties of ion-beam synthesized GaAsN nanostructures

Review of radiation damage in GaN-based materials and devices J. Vac. Sci. Technol. A 31, 050801 (2013) Type-II InAs/GaSb strained layer superlattices grown on GaSb (111)B substrate J. Vac. Sci. Technol. B 31, 03C123 (2013) Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy J. Vac. Sci. Technol. A 31, 031504 (2013) Growth and characterization of GaP/GaNP core/shell nanowires J.The authors report the simultaneous formation and transfer of GaAsN nanostructure layers to alternative substrates, a process termed "ion-cut synthesis." Ion-cut synthesis is induced by nitrogen ion implantation into GaAs (GaAs:N), followed by spin-on-glass (SOG) mediated wafer bonding and high temperature rapid thermal annealing (RTA). Due to the low ion-matrix diffusivity of GaAs:N, RTA induces the formation of both nanostructures and gas bubbles. The gas bubble pressure induces the formation and propagation of cracks, resulting in transfer of the nanostructured layer. The authors discuss the critical role of the physical properties and the thicknesses of the substrates and the SOG layer to the achievement of ion-cut synthesis.

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“…20), GaN nanocrystals in GaAs:N (Refs. [21][22][23], and InN nanocrystals in InAs:N (Ref. 24) have been reported.…”

Section: Introductionmentioning

confidence: 97%

Formation and transfer of GaAsN nanostructure layers

Collino

Wood

Estrada

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…2,3 Recently, we showed that a buried layer of nitrogen-rich GaAsN nanocrystallites may be synthesized within an apparently amorphous matrix by N ion implantation into epitaxial GaAs films followed by rapid thermal annealing ͑RTA͒. 4 The GaAsN nanostructures exhibit significant photoluminescence and cathodoluminescence in the near infrared range. 4,5 The apparent lowering of the fundamental band gap is likely due to the incorporation of a small amount of As in GaN.…”

Section: Introductionmentioning

confidence: 99%

“…4 The GaAsN nanostructures exhibit significant photoluminescence and cathodoluminescence in the near infrared range. 4,5 The apparent lowering of the fundamental band gap is likely due to the incorporation of a small amount of As in GaN. 6 Similar band gap lowering is predicted for As incorporation in InN.…”

Section: Introductionmentioning

confidence: 99%

“…Subsequent post-implantation thermal annealing resulted in the formation of GaN-rich nanocrystallites in either a crystalline or an amorphous matrix, depending on the ion dose. 4,8,9 The structure and orientation of the GaNrich nanocrystallites are often matrix-dependent. For example, zinc blende ͑ZB͒ GaN-rich nanocrystallites formed in a crystalline GaAs matrix with essentially the same crystallographic orientations as the substrate, while randomly oriented wurtzite ͑WZ͒ crystallites formed in an amorphous GaAs matrix.…”

Section: Introductionmentioning

confidence: 99%

“…4,8,9 These studies involved N ion implantation into GaAs substrates or n-doped GaAs films, with ion doses ranging from 7.5ϫ 10 15 to 5 ϫ 10 17 cm −2 . Subsequent post-implantation thermal annealing resulted in the formation of GaN-rich nanocrystallites in either a crystalline or an amorphous matrix, depending on the ion dose.…”

Section: Introductionmentioning

confidence: 99%

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Matrix-seeded growth of nitride semiconductor nanostructures using ion beams

Weng

Clarke

et al. 2005

Journal of Applied Physics

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We have examined the matrix-seeded growth of narrow-gap nitride nanostructures in nitrogen ion implanted GaAs and InAs. Low-energy implantation followed by rapid thermal annealing (RTA) results in the formation of 2–3 nm sized amorphous precipitates in a crystalline matrix. On the other hand, high-energy implantation results in an amorphous layer, with or without crystalline remnants. When the ion-beam-synthesized amorphous matrix is a continuous amorphous layer, subsequent RTA leads to the formation of 4–5 nm zinc blende (ZB)-GaN-rich crystallites in an amorphous matrix. When this matrix contains crystalline remnants, subsequent RTA leads to the formation of 2–4 nm ZB-GaN-rich crystallites within the amorphous regions. These results suggest that the matrix plays an important role in the nucleation and growth of narrow-gap nitride nanostructures, and that matrix-seeded growth may provide an opportunity to control the structure and properties of the nanostructures.

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Predicted depth profiles for nitrogen‐ion implantation into gallium arsenide

Risch

Bradley

2008

Phys. Status Solidi (c)

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We present a new method to predict the spatial variation of the band gap in nitrogen‐implanted gallium arsenide. Band gap engineering of a GaAsN alloy was employed to design an emission peak at 1.3 µm. Based on SRIM simulations, we propose a concentration of 6% N in GaAs at the plateau of the trapezoidal depth profile for the desired band gap. The depth profile could be manufactured by virtue of subsequent high voltage pulses. Software based on the Lieberman model was developed to predict fluences from measurements of a simple Langmuir probe and the time dependent electrode potential. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Evolution of structural and optical properties of ion-beam synthesized GaAsN nanostructures

Cited by 31 publications

References 37 publications

Formation and transfer of GaAsN nanostructure layers

Formation and transfer of GaAsN nanostructure layers

Matrix-seeded growth of nitride semiconductor nanostructures using ion beams

Predicted depth profiles for nitrogen‐ion implantation into gallium arsenide

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