Evolution of structural and optical characteristics in InAs quantum dots capped by GaAs layers comparable to dot height

Lee, S.J.; Kim, J.O.; Noh, Sam Kyu; Choe, J. W.; Lee, K.-S.

doi:10.1016/j.jcrysgro.2005.07.002

Cited by 6 publications

(1 citation statement)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Compared with the QW counterpart, this shift is approximately half the value of a 10 nm wide square QW [ 19 ]. However, this is typical for QDs since the shift depends strongly on the dimension of the confinement along the applied E-field, and is therefore smaller as the QD height is typically less than 10 nm [ 20 , 21 ]. It is to be noted that the straight dotted line only serves as guide to the eyes and does not imply that the Stark shift follows a linear behavior.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator

et al. 2008

View full text Add to dashboard Cite

In this work, we investigated the use of 10-layer InAs quantum dot (QD) as active region of an electroabsorption modulator (EAM). The QD-EAM is a p-i-n ridge waveguide structure with intrinsic layer thickness of 0.4 μm, width of 10 μm, and length of 1.0 mm. Photocurrent measurement reveals a Stark shift of ~5 meV (~7 nm) at reverse bias of 3 V (75 kV/cm) and broadening of the resonance peak due to field ionization of electrons and holes was observed for E-field larger than 25 kV/cm. Investigation at wavelength range of 1,300–1320 nm reveals that the largest absorption change occurs at 1317 nm. Optical transmission measurement at this wavelength shows insertion loss of ~8 dB, and extinction ratio of ~5 dB at reverse bias of 5 V. Consequently, methods to improve the performance of the QD-EAM are proposed. We believe that QDs are promising for EAM and the performance of QD-EAM will improve with increasing research efforts.

show abstract

Section: Resultsmentioning

confidence: 99%

Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator

et al. 2008

View full text Add to dashboard Cite

show abstract

Morphological control of GaAs quantum dots grown by droplet epitaxy using a thin AlGaAs capping layer

Mano

Sakoda

2010

Journal of Applied Physics

View full text Add to dashboard Cite

We demonstrate the control of GaAs quantum dots morphology by using a thin AlGaAs capping layer. The AlGaAs layer uniformly covers the GaAs quantum dots and provides protections against thermally induced deformation up to 580 °C, which allows improved dot quality. In addition, annealing of AlGaAs-capped quantum dots at 640 °C flattens the top of the dots, leading to the formation of height-controlled quantum dots and their narrow inhomogeneous width of 28 meV.

show abstract

InAs/InP quantum dots stacking: Impact of spacer layer on optical properties

Xiong

Zhang

2019

Journal of Applied Physics

View full text Add to dashboard Cite

The optical properties of a vertical multilayer stack of semiconductor self-assembled quantum dots (QDs) depend on the coupling status. We present an improved modeling method for analysis of QD stacks, consisting of several separate steps in the elastic strain analysis, to reproduce the realistic unidirectional strain accumulation along the QD growth direction from lower and upper dots. Based on this modeling method, by varying the spacer thickness, we systematically study a large variety of QD stack structures, for better understanding the influence of strain and electronic coupling mechanisms. A “quasi continuum band” or highly degenerate excited state (ES) is found in the closely multi-stacked QDs, probably accounting for the occurrence of distinct blueshifting of the photoluminescence peak wavelength for the decreasing spacer thickness. The enhanced ES emission from this type of stacking QD modeled by using rate equations may pave a way for designing potential high-performance laser devices operating on ES.

show abstract

Evolution of structural and optical characteristics in InAs quantum dots capped by GaAs layers comparable to dot height

Cited by 6 publications

References 25 publications

Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator

Investigation of Semiconductor Quantum Dots for Waveguide Electroabsorption Modulator

Morphological control of GaAs quantum dots grown by droplet epitaxy using a thin AlGaAs capping layer

InAs/InP quantum dots stacking: Impact of spacer layer on optical properties

Contact Info

Product

Resources

About