Thin films of titanium aluminum nitride (Ti (1-x) Al x N) were deposited on silicon, copper, and plasma nitrided AISI D2 tool steel substrates through reactive direct current grid-assisted magnetron sputtering. The depositions were performed in the metal and compound modes using nitrogen flow rates of (7.2 ± 0.1) sccm and (6.8 ± 0.2) sccm, respectively. The relations between the process parameters and the crystallographic orientation were investigated. Chemical and mechanical properties were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and instrumented indentation technique (IIT). X-ray diffraction spectra and electron diffraction patterns revealed the presence of a Ti (1-x) Al x N phase with a face-centered cubic structure in both films. In metal mode, the coatings exhibited a preferential (111) plane orientation, changing to (200) in the compound mode. The change in preferential orientation was influenced by the reactive gas partial pressure.