In this paper, a new method of modeling PV modules in the Pspice simulator is proposed. This method consists in describing the behaviour of PV modules and the evolution of their I-V characteristics as a function of the temperature and the solar irradiance. The developed modelling technique is based on the internal physical parameters (photogenerated current (Iph), saturation current (Is), ideality factor (n) of the diode, series resistance (Rs) and shunt resistance (Rsh)) extracted using a high performance extraction method based on the experimental characteristics of the studied module. Experimental measurements of I-V characteristics were taken, under real operating conditions, using a high-precision I-V curve plotter. The values of these parameters are injected into the single diode model established under the Pspice simulator. This technique allows to construct with satisfactory simplicity the I-V curve of different PV module technologies under different environmental conditions. The comparison of simulation results and those obtained experimentally shows the accuracy of the used method. Furthermore, based on measured data, extracted saturation current, series resistance and ideality factor seem to be not influenced by the variation of the irradiance. Then, the comparison of the extracted parameters with those calculated by empirical laws proposed in literature, shows the reliability of these laws and this for the studied monocrystalline PV module. Moreover, it has been studied, experimentally and with empirical laws, the evolution of the efficiency and the power, of the studied PV module, as a function of the temperature. It appears that the rise of temperature from 25 ° C to 55 ° C deals with an electrical efficiency drop of about 2.2 %.