No abstract

In this paper we present results concerning the modeling of oscillations in the I-V g characteristics (V g < 0), of metal/ultra-thin oxide/semiconductor (MOS) structures where the oxide thickness is 45 A. From the theoretical models of the literature we have shown that the modeling of oscillations cannot be made by using the conduction parameters (metal/ultra-thin oxide interface barrier, prefactor K 1 ) at low or high electric fields. However, it requires the determination and a fine analysis at low fields of the excess current which is due to the presence of defects in the oxide layer. The oscillations analysis of this excess current enabled us to show on the one hand a good agreement between the field values corresponding to the theoretical and experimental oscillation extrema, and on the other hand to estimate the defect depth.

No abstract

No abstract

No abstract