Evolution of VLSIs materials and packaging technology correlated with progress of thin films deposition and outlets bonding methods

Emelyanov, V. V.; Baranov, V.V.; Emelyanov, A. V.

doi:10.1109/estc.2008.4684450

Cited by 4 publications

(4 citation statements)

References 3 publications

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“…In the case of the collapsing shell, a similar separation of the local observables has to be realized after the appearance of the event horizon (like still in a idealized consideration in [23]) [25]. Thus, the local observables with the help of which one can probe the quantum field alters itself, such that a certain part of the field degrees becomes hidden for the observer.…”

Section: Discussionmentioning

confidence: 96%

Non-unitarity or hidden observables?

Emelyanov¹

2014

Preprint

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A free hermitian conformal field theory is considered in Minkowski, de Sitter and anti-de Sitter spacetimes. The first part of the paper studies spacetime inversion and conformal inversion, wherein their role in the field quantization is elucidated in those spaces. The second part of the paper is concerned with the non-unitary evolution of detector's state. Several examples of such processes are provided with a clarification of how the unitarity is preserved with still having well-known thermal effects.

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Section: Discussionmentioning

confidence: 96%

Non-unitarity or hidden observables?

Emelyanov¹

2014

Preprint

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“…Одним из приемов возбуждения шума в полупроводниковом приборе (чаще всего диоде) является легирование его материала примесями, создающими глубокие уровни в запрещенной зоне [3]. Как правило, эти примеси содержатся уже в исходном кремнии [4][5][6][7] либо неконтролируемо вносятся в течение технологического цикла создания активных областей прибора. Управление режимами формирования этих областей позволяет сконцентрировать примеси в активной области и добиться приемлемого уровня генерации.…”

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Formation of a stable defects structure in silicon noise diodes

Emelyanov

Emel’yanov

Baranov

et al. 2021

Vescì Akademìì navuk Belarusì. Seryâ fizika-tehničnyh navuk

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vThe possibilities and methods of creating a stable defective structure, including dislocation structure near the zones of p–n-transitions of silicon diodes of noise generators on plates with crystallographic orientations (111) and (001) have been investigated. The effective distribution control of uncontrolled impurities in monocrystalline silicon is achieved by forming a stable dislocation structure in its volume. In order to obtain the reproducible characteristics of noise generator diodes, it is necessary that the dislocation density be homogeneous throughout the plate area. Since the density of dislocations is slightly lower at the edge of the dislocation trail than in the middle, this means that the dislocation traces formed by the adjacent melting zones with the help of a laser beam should overlap. On the basis of experimental studies, it has been established that the necessary degree of uniformity of the density of defects generated is achieved by compliance with the condition of a = (1.5–5.0)d, where a is a step, d is a width of the laser spot on the wafer. The melting process was carried out in a nitrogen environment using a laser hettering unit. The real width of the melting zone turns out to be slightly larger than the diameter of the laser spot due to the thermal conductivity of the silicon and is about 10 μm. Increased dislocation generation on the Si3N4 inclusions, as opposed to dislocations on the Si–SiO2 border, leads to an additional expansion of the dislocation track at the work surface of the plate of noise diodes. The presence of the stable dislocation structure, as well as the presence of impurities and secondary metal atoms in the noise diodes ND 103L structure are confirmed by the secondary ion mass spectroscopy (SIMS) method. The results of the study have been tested at Corporation “INTEGRAL” (Belarus) and can be used in the manufacture of silicon noise diodes.

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“…For citation: Emelyanov V. A., Baranov Введение. Уменьшение топологических размеров элементов полупроводниковых приборов и рост степени интеграции интегральных микросхем (ИМС), в том числе с целью экономии площади кристаллов на пластинах монокристаллического кремния, приводит к значительному увеличению в применяемых в приборах и ИМС металлических пленках градиентов механических напряжений [1,2]. Это преимущественно связано с тем, что одна и та же величина напряжений, обусловленная различной природой контактирующих материалов и особенностями их формирования, локализуется на меньшей площади.…”

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Multilayered conductive films of semiconductor devices and integrated circuits

Emel’yanov

Baranov

2020

Vescì Akademìì navuk Belarusì. Seryâ fizika-tehničnyh navuk

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The stress-migration phenomenon in films of alloy Al–Si which is observed at a current of high density (an order 105 А/mm2) is investigated. By results of researches the technical decision which allows quality raise of obtained film structures is offered. Its essence consists in formation in films the traps for migrating atoms of aluminium at course of a current of high density at the expense of formation the passive layer of TiN on the metal layer surface, for example, Al–1,5 %Si. In the presence of advanced relief of a surface of modern integrated circuits, for example with sub-micron sizes of the topology elements, the thickness and structure of metal current-carrying films on relief steps differs from what are located on planar sites. It leads to occurrence of essential gradients of mechanical pressure which are stress-migration motive power. As it is known, that temperature factor of linear expansion of aluminium is approximately 20 times, than SiO2, that causes active generation of dot defects in a layer of the alloy on the base of aluminium which is much more plastic than SiO2. Under the influence of a gradient of residual pressure, dot defects, existed in films, for example vacancies, come to movement mainly on border of metal - dielectric and in due course under the influence of a current of high density lead to formation of group defects in an alloy film, in particular emptiness, hills etc. Since stress-migration processes on these sites occur most intensively, as a result there is a rupture of films mainly on steps of a topological relief. Results of the research have passed approbation and can be used at manufacturing of silicon semi-conductor devices and integrated microcircuits.

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Evolution of VLSIs materials and packaging technology correlated with progress of thin films deposition and outlets bonding methods

Cited by 4 publications

References 3 publications

Non-unitarity or hidden observables?

Non-unitarity or hidden observables?

Formation of a stable defects structure in silicon noise diodes

Multilayered conductive films of semiconductor devices and integrated circuits

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