EXAFS study on poly-Si1−XGeX films prepared by reactive thermal CVD method

Wakagi, Masatoshi; Yonamoto, Yoshiki; Ogata, Kiyoshi; Shimizu, Ken D.; Hanna, Jun‐ichi

doi:10.1016/j.jnoncrysol.2006.05.013

Cited by 1 publication

(2 citation statements)

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“…substrates by reactive thermal CVD using lamp heating. This deposition apparatus was developed to investigate deposition at a wide substrate temperature (T S ) range from 450 to 600 C. In previous studies on reactive thermal CVD with a sheath heater system, the depositions were mainly performed at T S below 475 C. [5][6][7][8][9][10][11][12] A schematic of the deposition apparatus is shown in Fig. 1.…”

Section: Methodsmentioning

confidence: 99%

“…[1][2][3][4] To solve this problem, a reactive thermal CVD technique has been proposed, wherein a Si 2 H 6 and GeF 4 gas mixture is used to deposit SiGe films. [5][6][7][8][9][10][11][12] The deposited films show good crystallinity without the amorphous-phase incubation layer. In this deposition technique, the redox reaction of Si 2 H 6 and GeF 4 is a key point in the fabrication of a high-quality crystal phase.…”

Section: Introductionmentioning

confidence: 99%

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Properties of SiGe Films Fabricated by Reactive Thermal Chemical Vapor Deposition Using Lamp Heating

Wakagi¹,

Suzumura

Kagatsume

et al. 2010

Jpn. J. Appl. Phys.

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The structural and electrical properties of SiGe films deposited by reactive thermal chemical vapor deposition using a lamp heating system with a source gas mixture of GeF 4 and Si 2 H 6 were investigated. In the SiGe film depositions with respective GeF 4 and Si 2 H 6 flow rates of 0.06 and 3 sccm, the film structure changed from crystalline to amorphous during the film growth. The results of secondary ion mass spectroscopy analysis and high-temperature deposition suggest that the gas phase reactions cause the structural change. To suppress the gas phase reactions, lowpressure depositions are investigated. The SiGe film deposited at a relatively low pressure of 400 Pa shows good crystallinity. The thin-film transistor with this SiGe film also reveals a high p-channel mobility of about 10 cm 2 ÁV À1 Ás À1 . #

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