Examination by interfacial layer and inhomogeneous barrier height model of temperature-dependent I–V characteristics in Co/p-InP contacts

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

“…In general, there is a discrepancy between the BHs obtained from reverse bias C-V measurements and forward bias I-V measurements, i.e., the value of˚C V is significantly higher than˚I V . This discrepancy could be explained in terms of the existence of excess capacitance of devices due to N ss or dislocations at M/S interface and barrier height (BH) inhomogeneties [21][22][23][24][25][26][27][28]. It is well known that the electrical characterization only at room temperature or narrow temperature range of the semiconductor devices, such as metal-semiconductor (MS) or metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBDs), solar cells (SCs) and laser diodes (LDs), cannot give detailed information about their conduction mechanisms or the nature of barrier formation at M/S interface.…”

Temperature and voltage dependent current-transport mechanisms in GaAs/AlGaAs single-quantum-well lasers

“…There are many methods of determining the SBH based on I-V, C-V and photoelectric measurements in the literature [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29]. Detailed knowledge of the current-transport process involved is essential in order to extract the barrier parameters, namely, BH, n and R s .…”

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

“…Previously, many attempts have been made to investigate the electrical properties of InP Schottky diodes. Ejderha et al [9] studied the current-voltage (I-V-T) characteristics of the sputtered Co/p-type InP Schottky diodes in the temperature range of 80-400 K. They observed a double Gaussian distribution before making the correction in current-voltage (I-V) characteristics for the effect of the interfacial layer which was attributed to the presence of rough and high resistivity-thin native oxide layer which contains many contacts with low barrier height at the interface and after correction, the barrier height obeyed the single Gaussian distribution model. Singh et al [10] demonstrated that the soft reverse current-voltage (I r -V r ) characteristics of Au/ptype InP Schottky diodes with a thin interface layer were well described by the interface layer thermionic emission theory proposed by Wu [11].…”