Examination of CeFe4Sb12 upon exposure to air: Is this material appropriate for use in terrestrial, high-temperature thermoelectric devices?

Sklad, Alina C.; Gaultois, Michael W.; Grosvenor, Andrew P.

doi:10.1016/j.jallcom.2010.05.167

Cited by 30 publications

(27 citation statements)

References 21 publications

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“…2k-n). In the XRD analyses, Fe-based oxides were not detected at aging temperatures below 773 K. According to the report by Sklad et al, 16 the Fe atom in the CeFe 4 Sb 12 skutterudite was oxidized into amorphous Fe 3+ oxide at temperatures below 773 K, which was undetectable by XRD. Although the chemical composition of the skutterudite in this study was different from that of their study, no diffraction peaks for Fe-based oxides could possibly be attributed to amorphous Fe 3+ oxides.…”

Section: Methodsmentioning

confidence: 83%

“…Figure 1 shows the TG-DSC analysis results for the La 0.9 Fe 3 CoSb 12 skutterudite. As demonstrated by the TG curve, La 0.9 Fe 3 CoSb 12 became oxidized at temperatures above 673 K. Park et al 18 reported through XRD analysis that oxidation of In 0.25 Co 3 FeSb 12 started at 623 K, and Sklad et al 16 reported through TG analysis that oxidation of CeFe 4 Sb 12 began at 573 K. Direct comparison of the oxidation behavior is difficult, due to the differences in analytical method and chemical composition. In our data, no phase transformations other than oxidation were observed, as shown in the DSC curve in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…Generally, phase stability and resistance to oxidation are the most important factors for evaluating the thermal stability of the filled skutterudites for hightemperature applications. [13][14][15][16][17] The oxidation resistance can be evaluated by using the activation energy for oxidation, and higher activation energies are better for oxidation resistance. In this study, La-filled and Co-substituted skutterudite (La 0.9 Fe 3 CoSb 12 ) was synthesized, and its thermal stability was evaluated.…”

Section: Introductionmentioning

confidence: 99%

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Thermal Stability of La0.9Fe3CoSb12 Skutterudite

Shin

Kim

Park

et al. 2014

Journal of Elec Materi

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The thermal stability of the La 0.9 Fe 3 CoSb 12 skutterudite was examined by varying the aging conditions of temperature, time, and atmosphere (air and vacuum). Thermogravimetry, differential scanning calorimetry and x-ray diffraction analyses revealed that the La 0.9 Fe 3 CoSb 12 was significantly oxidized at temperatures above 673 K in air. The Sb-based oxides were preferably formed when aged at high temperatures in air. The thickness of the oxide layers was found to increase with increasing aging temperature and time, while the activation energy for the oxidation of the Fe-Sb-based skutterudite was lower than that of the Co-Sb-based skutterudites. However, when the analysis was performed in a vacuum, the La 0.9 Fe 3 CoSb 12 skutterudite was stable, and no oxide layers were observed after aging at 823 K for 100 h. These results suggest that a protective coating for the skutterudite materials or the encapsulated packaging of the skutterudite modules is required for hightemperature applications.

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Section: Methodsmentioning

confidence: 83%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Thermal Stability of La0.9Fe3CoSb12 Skutterudite

Shin

Kim

Park

et al. 2014

Journal of Elec Materi

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“…The performance of thermoelectric material can be characterized by dimensionless figure of merit [1,2], ZT = S 2 σT /(κ e + κ L ), where S, σ, T, κ e and κ L are the Seebeck coefficient, electrical conductivity, absolute temperature, the electronic and lattice thermal conductivities, respectively. Bismuthtellurium systems [3,4], silicon-germanium alloys [5,6], lead chalcogenides [7,8] and skutterudites [9,10] have been identified as excellent thermoelectric material for thermoelectric devices. For thermoelectric research, the main objective is to search for high ZT materials, which has proven to be interesting and challenging.…”

mentioning

confidence: 99%

Pressure enhanced thermoelectric properties in Mg₂Sn

Guo

Wang

2016

RSC Adv.

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Pressure dependence of electronic structures and thermoelectric properties of Mg2Sn are investigated by using a modified Becke and Johnson (mBJ) exchange potential, including spin-orbit coupling (SOC). The corresponding value of spin-orbit splitting at Γ point is 0.47 eV, which is in good agreement with the experimental value 0.48 eV. With the pressure increasing, the energy band gap first increases, and then decreases. In certain doping range, the power factor for n-type has the same trend with energy band gap, when the pressure increases. Calculated results show that the pressure can lead to significantly enhanced power factor in n-type doping below the critical pressure, and the corresponding lattice thermal conductivity near the critical pressure shows the relatively small value. These results make us believe that thermoelectric properties of Mg2Sn can be improved in n-type doping by pressure. Thermoelectric material by using the Seebeck effect can convert waste heat directly to electricity to solve energy problems. The performance of thermoelectric material can be characterized by dimensionless figure of merit [1,2], ZT = S 2 σT /(κ e + κ L ), where S, σ, T, κ e and κ L are the Seebeck coefficient, electrical conductivity, absolute temperature, the electronic and lattice thermal conductivities, respectively. Bismuthtellurium systems [3,4], silicon-germanium alloys [5,6], lead chalcogenides [7,8] and skutterudites [9,10] have been identified as excellent thermoelectric material for thermoelectric devices. For thermoelectric research, the main objective is to search for high ZT materials, which has proven to be interesting and challenging.The thermoelectric material Mg 2 X(X = Si, Ge, Sn) composed of abundant, low-cost elements and their alloys have attracted much recent attention [11][12][13], and various doping strategies have been adopted to attain high ZT [14][15][16]. Pressure by tuning the electronic structures of materials can accomplish many interesting phenomenons like recent pressure-induced high-Tc superconductivity in (H 2 S) 2 H 2 [17,18]. Here, we use first-principle calculations and Boltzmann transport theory to address the pressure dependence of thermoelectric properties in the Mg 2 Sn. Calculated results show that the pressure dependence of energy band gap with mBJ+SOC is consistent with one with mBJ [19], and first increases, and then decreases. Pressure can significantly improve power factor in n-type doping below the critical pressure. It is found that pressure can reduce the lattice thermal conductivity in certain pressure range. These lead to enhanced ZT , and make Mg 2 Sn become more efficient for thermoelectric application in n-type doping by pressure. So, pressure tuning offers a very effective method to search for materials with enhanced thermoelectric properties.The rest of the paper is organized as follows. Firstly, we shall give our computational details. Secondly, weEnergy ( The energy band gap (Gap) and the value of spin-orbit splitting at Γ point (∆so) as a function of pressure...

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“…However, there are still obstacles for realizing the practical application of SKDbased TE devices. For example, the skutterudite-based materials are inclined to volatilize or to be oxidized [6][7][8][9][10][11][12][13][14] at the service temperature, which will result in the degradation of TE performance. Wei et al [7] investigated the stability of Ba and In double-filled SKDs by periodically quenching the samples from 723 K to room temperature, and found that the quenching treatment caused enrichment of Ba and loss of Sb and Co on the grain boundaries.…”

Section: Introductionmentioning

confidence: 99%